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TSM6866SDCA RVG

P1-P3P4-P6
TSM6866SD
20V Dual N-Channel MOSFET
Document Number:
DS_P0000128 1
Version: C15
TSSOP
-
8
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Specially Designed for Li-on Battery Packs
● Battery Switch Application
Ordering Information
Part No. Package Packing
TSM6866SDCA RVG TSSOP-8 3Kpcs / 13” Reel
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating
(Ta = 25°C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
20 V
Gate-Source Voltage V
GS
±12 V
Continuous Drain Current I
D
6 A
Pulsed Drain Current I
DM
30 A
Continuous Source Current (Diode Conduction)
a,b
I
S
1.7 A
Maximum Power Dissipation
Ta = 25°C
P
D
1.6
W
Ta = 75°C 1.1
Operating Junction Temperature T
J
+150 °C
Operating Junction and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Thermal Performance
Parameter Symbol Limit Unit
Junction to Case Thermal Resistance RӨ
JC
30 °C/W
Junction to Ambient Thermal Resistance (PCB mounted) RӨ
JA
62.5 °C/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
PRODUCT SUMMARY
V
DS
(V) R
(mΩ) I
D
(A)
20
30 @ V
GS
= 4.5V 6.0
40 @ V
GS
= 2.5V 5.2
Block Diagram
Dual N-Channel MOSFET
Pin
Definition
:
1. Drain 1 8. Drain 2
2. Source 1 7. Source 2
3. Source 1 6. Source 2
4. Gate 1 5. Gate 2
TSM6866SD
20V Dual N-Channel MOSFET
Document Number:
DS_P0000128 2
Version: C15
Electrical Specifications
(Ta = 25°C unless otherwise noted)
Parameter Conditions Symbol
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= 250uA BV
DSS
20 -- -- V
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250uA V
GS(TH)
0.6 -- -- V
Gate Body Leakage V
GS
= ±12V, V
DS
= 0V I
GSS
-- -- ±100 nA
Zero Gate Voltage Drain Current V
DS
= 20V, V
GS
= 0V I
DSS
-- -- 1.0 uA
On-State Drain Current V
DS
=5V, V
GS
= 4.5V I
D(ON)
30 -- -- A
Drain-Source On-State Resistance
V
GS
= 4.5V, I
D
= 6.0A
R
DS(ON)
-- 21 30
mΩ
V
GS
= 2.5V, I
D
= 5.2A -- 30 40
Forward Transconductance V
DS
= 10V, I
D
= 6A g
fs
-- 30 -- S
Diode Forward Voltage I
S
= 1.7A, V
GS
= 0V V
SD
-- 0.7 1.2 V
Dynamic
b
Total Gate Charge
V
DS
= 10V, I
D
= 6A,
V
GS
= 4.5V
Q
g
-- 5 7
nC
Gate-Source Charge Q
gs
-- 1 --
Gate-Drain Charge Q
gd
-- 1.5 --
Input Capacitance
V
DS
= 8V, V
GS
= 0V,
f = 1.0MHz
C
iss
-- 565 --
pF
Output Capacitance C
oss
-- 105 --
Reverse Transfer Capacitance C
rss
-- 75 --
Switching
b,C
Turn-On Delay Time
V
DD
= 10V, R
L
= 10Ω,
I
D
= 1A, V
GEN
= 4.5V,
R
G
= 6Ω
t
d(on)
-- 8 20
nS
Turn-On Rise Time t
r
-- 10 20
Turn-Off Delay Time t
d(off)
-- 22 45
Turn-Off Fall Time t
f
-- 6 15
Notes:
a. pulse test: PW
≤
300µS, duty cycle
≤
2%
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
TSM6866SD
20V Dual N-Channel MOSFET
Document Number:
DS_P0000128 3
Version: C15
Electrical Characteristics Curve
(Ta = 25°C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
P1-P3P4-P6

TSM6866SDCA RVG

Mfr. #:
Buy TSM6866SDCA RVG
Manufacturer:
Taiwan Semiconductor
Description:
MOSFET Dual 20V N channel Mosfet
Lifecycle:
New from this manufacturer.
Delivery:
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