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SQM120N10-3m8_GE3

P1-P3P4-P6P7-P9P10-P10
SQM120N10-3m8
www.vishay.com
Vishay Siliconix
S13-1433-Rev. A, 01-Jul-13
1
Document Number: 63404
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
FEATURES
•TrenchFET
®
Power MOSFET
• Package with Low Thermal Resistance
• AEC-Q101 Qualified
d
•100 % R
g
and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PRODUCT SUMMARY
V
DS
(V) 100
R
DS(on)
() at V
GS
= 10 V 0.0038
I
D
(A) 120
Configuration Single
D
G
S
N-Channel MOSFET
TO-263
S
D
G
Top View
ORDERING INFORMATION
Package TO-263
Lead (Pb)-free and Halogen-free SQM120N10-3m8-GE3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
100
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
a
T
C
= 25 °C
I
D
120
A
T
C
= 125 °C 120
Continuous Source Current (Diode Conduction)
a
I
S
120
Pulsed Drain Current
b
I
DM
480
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
73
Single Pulse Avalanche Energy E
AS
266 mJ
Maximum Power Dissipation
b
T
C
= 25 °C
P
D
375
W
T
C
= 125 °C 125
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
c
R
thJA
40
°C/W
Junction-to-Case (Drain) R
thJC
0.4
SQM120N10-3m8
www.vishay.com
Vishay Siliconix
S13-1433-Rev. A, 01-Jul-13
2
Document Number: 63404
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0, I
D
= 250 μA 100 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 2.5 3.0 3.5
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= 100 V - - 1
μA V
GS
= 0 V V
DS
= 100 V, T
J
= 125 °C - - 50
V
GS
= 0 V V
DS
= 100 V, T
J
= 175 °C - - 500
On-State Drain Current
a
I
D(on)
V
GS
= 10 V V
DS
5 V 120 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V I
D
= 20 A - 0.0030 0.0038
V
GS
= 10 V I
D
= 20 A, T
J
= 125 °C - - 0.0064
V
GS
= 10 V I
D
= 20 A, T
J
= 175 °C - - 0.0080
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 20 A - 82 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= 25 V, f = 1 MHz
- 5780 7230
pF Output Capacitance C
oss
- 3070 3840
Reverse Transfer Capacitance C
rss
- 305 385
Total Gate Charge
c
Q
g
V
GS
= 10 V V
DS
= 50 V, I
D
= 70 A
- 125 190
nC Gate-Source Charge
c
Q
gs
-28-
Gate-Drain Charge
c
Q
gd
-46-
Gate Resistance R
g
f = 1 MHz 1.6 3.3 5
Turn-On Delay Time
c
t
d(on)
V
DD
= 50 V, R
L
= 0.7
I
D
70 A, V
GEN
= 10 V, R
g
= 1
-1625
ns
Rise Time
c
t
r
- 110 165
Turn-Off Delay Time
c
t
d(off)
-4060
Fall Time
c
t
f
-1220
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
- - 480 A
Forward Voltage V
SD
I
F
= 100 A, V
GS
= 0 - 0.9 1.5 V
SQM120N10-3m8
www.vishay.com
Vishay Siliconix
S13-1433-Rev. A, 01-Jul-13
3
Document Number: 63404
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
50
100
150
200
0 2 4 6 8 10
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 10 V thru 7 V
V
GS
= 5 V
V
GS
= 6 V
0
40
80
120
160
200
0 14 28 42 56 70
g
fs
- Transconductance (S)
I
D
- Drain Current (A)
T
C
= 125 °C
T
C
= - 55
°
C
T
C
= 25
°
C
0
2000
4000
6000
8000
10000
0 20 40 60 80 100
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0
30
60
90
120
150
0 2 4 6 8 10
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= - 55°C
T
C
= 125°C
T
C
= 25°C
0.000
0.002
0.004
0.006
0.008
0.010
0 20 40 60 80 100 120
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 10 V
0
2
4
6
8
10
0 30 60 90 120 150
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
I
D
= 70 A
V
DS
= 50 V
P1-P3P4-P6P7-P9P10-P10

SQM120N10-3m8_GE3

Mfr. #:
Buy SQM120N10-3m8_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N-Channel 100V AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
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