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DDTD142TU-7-F

P1-P3
DDTD (LO-R1) U
NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
DS30398 Rev. 6 - 2
1 of 3
www.diodes.com
DDTD (LO-R1) U
© Diodes Incorporated
• Complementary PNP Types Available (DDTB)
• Built-In Biasing Resistors
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device, Note 3 and 4
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "Green" Molding
Compound, Note 4. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
• Marking Information: See Table Below & Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
P/N R1 (NOM) R2 (NOM) MARKING
DDTD122LU
DDTD142JU
DDTD122TU
DDTD142TU
0.22KΩ
0.47KΩ
0.22KΩ
0.47KΩ
10KΩ
10KΩ
OPEN
OPEN
N75
N76
N77
N78
SOT-323
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
α
0° 8°
All Dimensions in mm
A
M
J
L
ED
C
B
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Supply Voltage, (3) to (2)
V
CC
50 V
Input Voltage, (1) to (2) DDTD122LU
DDTD142JU
V
IN
-5 to +6
-5 to +6
V
Input Voltage, (2) to (1) DDTD122TU
DDTD142TU
V
EBO (MAX)
5 V
Output Current All
I
C
500 mA
Power Dissipation (Note 1)
P
d
200 mW
Thermal Resistance, Junction to Ambient Air (Note 1)
R
θ
JA
625
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Notes: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to
Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
Schematic and Pin Configuration
R1
OUT
B
C
E
R2
3
21
IN
GND(0)
H
K
G
DS30398 Rev. 6 - 2
2 of 3
www.diodes.com
DDTD (LO-R1) U
© Diodes Incorporated
Electrical Characteristics @T
A
= 25°C unless otherwise specified R1, R2 Types
Characteristic Symbol Min Typ Max Unit Test Condition
DDTD122LU
DDTD142JU
V
l(off)
0.3
0.3
⎯ ⎯
V
V
CC
= 5V, I
O
= 100μA
Input Voltage
DDTD122LU
DDTD142JU
V
l(on)
⎯ ⎯
2.0
2.0
V
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 20mA
Output Voltage
V
O(on)
⎯ ⎯
0.3V V
I
O
/I
l
= 50mA/2.5mA
Input Current
DDTD122LU
DDTD142JU
I
l
⎯ ⎯
28
13
mA
V
I
= 5V
Output Current
I
O(off)
⎯ ⎯
0.5
μA
V
CC
= 50V, V
I
= 0V
DC Current Gain
DDTD122LU
DDTD142JU
G
l
56
56
⎯ ⎯ ⎯ V
O
= 5V, I
O
= 50mA
Gain-Bandwidth Product*
f
T
⎯
200
⎯
MHz
V
CE
= 10V, I
E
= 5mA, f = 100MHz
* Transistor - For Reference Only
Electrical Characteristics @T
A
= 25°C unless otherwise specified R1-Only, R2-Only Types
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BV
CBO
50
⎯ ⎯
V
I
C
= 50μA
Collector-Emitter Breakdown Voltage
BV
CEO
40
⎯ ⎯
V
I
C
= 1mA
Emitter-Base Breakdown Voltage DDTD122TU
DDTD142TU
BV
EBO
5
⎯ ⎯
V
I
E
= 50μA
I
E
= 50μA
Collector Cutoff Current
I
CBO
⎯ ⎯
0.5
μA
V
CB
= 50V
Emitter Cutoff Current
DDTD122TU
DDTD142TU
I
EBO
⎯
⎯
⎯
0.5
0.5
μA
V
EB
= 4V
Collector-Emitter Saturation Voltage
V
CE(sat)
⎯ ⎯
0.3 V
I
C
= 50mA, I
B
= 2.5mA
DC Current Transfer Ratio
DDTD122TU
DDTD142TU
h
FE
100
100
250
250
600
600
⎯ I
C
= 5mA, V
CE
= 5V
Gain-Bandwidth Product*
f
T
⎯
200
⎯
MHz
V
CE
= 10V, I
E
= -5mA, f = 100MHz
* Transistor - For Reference Only
DS30398 Rev. 6 - 2
3 of 3
www.diodes.com
DDTD (LO-R1) U
© Diodes Incorporated
-50
050100150
250
200
150
50
100
0
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Power Derating Curve
A
°
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
d
Ordering Information (Note 4 & 5)
Device
Packaging Shipping
DDTD122LU-7-F
SOT-323 3000/Tape & Reel
DDTD142JU-7-F
SOT-323 3000/Tape & Reel
DDTD122TU-7-F
SOT-323 3000/Tape & Reel
DDTD142TU-7-F
SOT-323 3000/Tape & Reel
Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
NXX
YM
NXX = Product Type Marking Code
See Page 1 Table
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
Date Code Key
Year 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012
Code N P R S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
P1-P3

DDTD142TU-7-F

Mfr. #:
Buy DDTD142TU-7-F
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - Pre-Biased 200MW 0.47K
Lifecycle:
New from this manufacturer.
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