Sheet No.: D2-A02102EN
Electro-optical Characteristics
Parameter Conditions
Forward voltage
Terminal capacitance
Collector dark current
Transfer
charac-
teristics
Emitter-collector breakdown voltage
Collector current
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Isolation resistance
MIN.
6
0.25
5×10
10
TYP.
1.2
30
1×10
11
4
3
MAX.
1.4
250
100
2.0
0.2
18
18
Unit
V
V
pF
nA
V
mA
V
µs
µs
Symbol
V
F
C
t
I
CEO
BV
CEO
BV
ECO
I
C
V
CE (sat)
t
r
t
f
R
ISO
Response time
Rise time
Fall time
Input
Output
I
F
10mA
V=0, f=1kHz
V
CE
=50V, I
F
=0
I
C
=0.1mA, I
F
=0
I
E
=10µA, I
F
=0
I
F
0.5mA, V
CE
=5V
DC500V, 40 to 60%RH
V
CE
=2V, I
C
=2mA, R
L
=100
Floating capacitance 0.6 1.0 pFC
f
V=0, f=1MHz
I
F
10mA, I
C
=1mA
80
(T
a
=25˚C)
10 −−kV/µs
CMR
Common mode rejection voltage
T
a
=25˚C, R
L
=470, V
CM
=1.5kV(peak),
I
F
=0, V
CC
=9V, V
np
=100mV
Absolute Maximum Ratings
(T
a
=25˚C)
Parameter Symbol Unit
Input
Forward current mA
*1
Peak forward current mA
Power dissipation mW
Output
Collector-emitter voltage
V
Emitter-collector voltage
V
Collector current mA
Collector power dissipation
mW
Total power dissipation mW
*2
Isolation voltage
Operating temperature ˚C
Storage temperature ˚C
*3
Soldering temperature
I
F
I
FM
P
V
CEO
V
ECO
I
C
P
C
P
tot
V
iso (rms)
T
opr
T
stg
T
sol
˚C
*1 Pulse width100µs, Duty ratio : 0.001
*2 40 to 60%RH, AC for 1 minute, f=60Hz
*3 For 10s
Rating
±10
±200
15
80
6
50
150
170
30 to +100
40 to +125
260
2.5 kV
4
PC3H41xNIP0F Series
Sheet No.: D2-A02102EN
Model Line-up
I
C
[mA]
(I
F
=±0.5mA, V
CE
=5V, T
a
=25˚C)
with or without
A
0.25 to 2.0
0.5 to 1.5
Package Rank mark
Model No.
PC3H410NIP0F
PC3H411NIP0F
3 000pcs/reel
Taping
5
Please contact a local SHARP sales representative to inquire about production status.
PC3H41xNIP0F Series
Sheet No.: D2-A02102EN
Total power dissipation P
tot
(mW)
Ambient temperature T
a
(˚C)
0
200
150
170
100
50
30 0 25 50 75 100 125
250
Fig.5 Total Power Dissipation vs. Ambient
Temperature
Forward current I
F
(mA)
Ambient temperature T
a
(˚C)
0
10
15
5
30 0 25 50 75 100
125
Fig.2 Forward Current vs. Ambient
Temperature
Diode power dissipation P (mW)
Ambient temperature T
a
(˚C)
0
15
10
5
30 0 25 50 75 100 125
Fig.3 Diode Power Dissipation vs. Ambient
Temperature
Collector power dissipation P
C
(mW)
Ambient temperature T
a
(˚C)
0
200
250
150
100
50
30 0 25 50 75 100 125
Fig.4 Collector Power Dissipation vs.
Ambient Temperature
6
Fig.1 Test Circuit for Common Mode Rejection Voltage
V
CM
V
cp
V
np
V
O
(dV/d
t)
1)
R
L
V
np
V
CC
V
CM
1) V
cp
: Voltage which is generated by displacement current in floating
capacitance between primary and secondary side.
(V
cp
Nearly =
dV/dt×C
f
×R
L
)
V
CM :
High wave
pulse
R
L
=470
V
CC
=9V
PC3H41xNIP0F Series

PC3H411NIP0F

Mfr. #:
Manufacturer:
Description:
Transistor Output Optocouplers 100-300% CTR ranked PC3H410NiP0F
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet