CM1248−04S9
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2
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5−Lead SOT−953
CM1248−04S9
CH1 (1)
V
N
(2)
CH2 (3)
CH4 (5)
CH3 (4)
PACKAGE / PINOUT DIAGRAM
Table 1. PIN DESCRIPTIONS
Pins Name Description
(Refer to package / pinout diagram) CHx The cathode of the respective TVS diode, which should be connected to the node
requiring transient voltage protection.
(Refer to package / pinout diagram) V
N
The anode of the TVS diodes.
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter Rating Units
Storage Temperature Range −65 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter Rating Units
Operating Temperature −40 to +85 C
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
Parameter Conditions Min Typ Max Units
C
IN
Channel Input Capacitance T
A
= 25C, 0 VDC, 1 MHz 10 13 pF
DC
IN
Differential Channel I/O to GND Capacitance T
A
= 25C, 2.5 VDC, 1 MHz 0.19 pF
V
RSO
Reverse Stand−off Voltage
I
R
= 10 mA, T
A
= 25C
5.5 V
I
R
= 1 mA, T
A
= 25C 6.1 V
I
LEAK
Leakage Current V
IN
= 5.0 VDC, T
A
= 25C 0.75
mA
V
SIG
Small Signal Clamp Voltage
Positive Clamp
Negative Clamp
I = 10 mA, T
A
= 25C
I = −10 mA, T
A
= 25C
6.8
−0.89
V
V
ESD
ESD Withstand Voltage
Contact Discharge per IEC 61000−4−2 Standard
Human Body Model, MIL−STD−883, Method 3015
T
A
= 25C (Notes 3 and 4)
T
A
= 25C (Notes 2 and 4)
15
30
kV
R
D
Diode Dynamic Resistance
Forward Conduction
Reverse Conduction
T
A
= 25C
(Note 2) 0.57
1.36
W
1. All parameters specified at T
A
= −40C to +85C unless otherwise noted.
2. Human Body Model per MIL−STD−883, Method 3015, C
Discharge
= 100 pF, R
Discharge
= 1.5 KW, V
N
grounded.
3. Standard IEC 61000−4−2 with C
Discharge
= 150 pF, R
Discharge
= 330 W, V
N
grounded.
4. These measurements performed with no external capacitor on CH
X
.
