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MRFE6S9130HR3

P1-P3P4-P6P7-P9P10-P11
MRFE6S9130HR3 MRFE6S9130HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 11. Power Gain versus Output Power
P
out
, OUTPUT POWER (WATTS) CW
G
ps
, POWER GAIN (dB)
V
DD
= 24 V
250
14
20
0 20050
16
15
100 150
18
17
19
I
DQ
= 950 mA
f = 880 MHz
28 V
32 V
250
10
8
90
T
J
, JUNCTION TEMPERATURE (°C)
Figure 12. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at V
DD
= 28 Vdc, P
out
= 27 W Avg., and η
D
= 30.5%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
10
7
10
6
10
5
110 130 150 170 190
MTTF (HOURS)
210 230
N- CDMA TEST SIGNAL
10
0.0001
100
0
PEAK−TO−AVERAGE (dB)
Figure 13. Single- Carrier CCDF N-CDMA
10
1
0.1
0.01
0.001
2468
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±750 kHz Offset. ALT1 Measured in 30 kHz
Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
PROBABILITY (%)
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−60
−110
−10
(dB)
−20
−30
−40
−50
−70
−80
−90
−100
+ACPR in 30 kHz
Integrated BW
1.2288 MHz
Channel BW
2.9
0.7 2.2
1.5
0−0.7
−1.5
−2.2
−2.9
−3.6
3.6
f, FREQUENCY (MHz)
Figure 14. Single- Carrier N-CDMA Spectrum
−ACPR in 30 kHz
Integrated BW
−ALT1 in 30 kHz
Integrated BW
+ALT1 in 30 kHz
Integrated BW
8
RF Device Data
Freescale Semiconductor
MRFE6S9130HR3 MRFE6S9130HSR3
Figure 15. Series Equivalent Source and Load Impedance
f
MHz
Z
source
Ω
Z
load
Ω
850
865
880
1.50 - j0.09
1.55 + j0.31
1.52 + j0.11
0.89 - j1.18
0.87 - j1.03
0.85 - j0.89
V
DD
= 28 Vdc, I
DQ
= 950 mA, P
out
= 27 W Avg.
Z
o
= 2 Ω
Z
load
f = 850 MHz
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured
from drain to ground.
Z
source
Z
load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
f = 910 MHz
Z
source
895
910 1.68 + j0.71
1.60 + j0.510.83 - j0.75
0.84 - j0.64
f = 850 MHz
f = 910 MHz
MRFE6S9130HR3 MRFE6S9130HSR3
9
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 465- 06
ISSUE G
NI- 780
MRFE6S9130HR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 1.335 1.345 33.91 34.16
B 0.380 0.390 9.65 9.91
C 0.125 0.170 3.18 4.32
D 0.495 0.505 12.57 12.83
E 0.035 0.045 0.89 1.14
F 0.003 0.006 0.08 0.15
G 1.100 BSC 27.94 BSC
H 0.057 0.067 1.45 1.70
K 0.170 0.210 4.32 5.33
N 0.772 0.788 19.60 20.00
Q .118 .138 3.00 3.51
R 0.365 0.375 9.27 9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
3
2
D
G
K
C
E
H
S
F
S 0.365 0.375 9.27 9.52
M 0.774 0.786 19.66 19.96
aaa 0.005 REF 0.127 REF
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
Q2X
M
A
M
bbb B
M
T
M
A
M
bbb B
M
T
B
B
(FLANGE)
SEATING
PLANE
M
A
M
ccc B
M
T
M
A
M
bbb B
M
T
A
A
(FLANGE)
T
N
(LID)
M
(INSULATOR)
M
A
M
aaa B
M
T
(INSULATOR)
R
M
A
M
ccc B
M
T
(LID)
CASE 465A- 06
ISSUE H
NI- 780S
MRFE6S9130HSR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.805 0.815 20.45 20.70
B 0.380 0.390 9.65 9.91
C 0.125 0.170 3.18 4.32
D 0.495 0.505 12.57 12.83
E 0.035 0.045 0.89 1.14
F 0.003 0.006 0.08 0.15
H 0.057 0.067 1.45 1.70
K 0.170 0.210 4.32 5.33
M 0.774 0.786 19.61 20.02
R 0.365 0.375 9.27 9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
1
2
D
K
C
E
H
F
3
U
(FLANGE)
4X
Z
(LID)
4X
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
aaa 0.005 REF 0.127 REF
S 0.365 0.375 9.27 9.52
N 0.772 0.788 19.61 20.02
U −−− 0.040 −−− 1.02
Z −−− 0.030 −−− 0.76
M
A
M
bbb B
M
T
B
B
(FLANGE)
2X
SEATING
PLANE
M
A
M
ccc B
M
T
M
A
M
bbb B
M
T
A
A
(FLANGE)
T
N
(LID)
M
(INSULATOR)
M
A
M
ccc B
M
T
M
A
M
aaa B
M
T
R
(LID)
S
(INSULATOR)
P1-P3P4-P6P7-P9P10-P11

MRFE6S9130HR3

Mfr. #:
Buy MRFE6S9130HR3
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors HV6E 900MHZ 130W NI780H
Lifecycle:
New from this manufacturer.
Delivery:
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