Electrical specifications VND830MSP-E
16/28 Doc ID 10903 Rev 4
Figure 19. Input hysteresis voltage Figure 20. Overvoltage shutdown
Figure 21. Turn-on voltage slope Figure 22. Turn-off voltage slope
Figure 23. I
LIM
vs T
case
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
Vhyst (V)
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
30
32
34
36
38
40
42
44
46
48
50
Vov (V)
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
200
250
300
350
400
450
500
550
600
dVout/dt(off) (V/ms)
Vcc=13V
Rl=6.5Ohm
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
0
2
4
6
8
10
12
14
16
18
20
Ilim (A)
Vcc=13V
VND830MSP-E Application information
Doc ID 10903 Rev 4 17/28
3 Application information
Figure 24. Application schematic
3.1 GND protection network against reverse battery
3.1.1 Solution 1: resistor in the ground line (R
GND
only)
This can be used with any type of load.
The following is an indication on how to dimension the R
GND
resistor.
1. R
GND
600 mV / I
S(on)max
2. R
GND
≥ (-V
CC
) / (-I
GND
)
where -I
GND
is the DC reverse ground pin current and can be found in the absolute
maximum rating section of the device’s datasheet.
Power dissipation in R
GND
(when V
CC
< 0: during reverse battery situations) is:
P
D
= (-V
CC
)
2
/ R
GND
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
S(on)max
becomes the sum of the
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
R
GND
produces a shift (I
S(on)max
* R
GND
) in the input thresholds and the status output
V
CC
OUTPUT2
D
ld
+5V
R
prot
OUTPUT1
STATUS1
INPUT1
+5V
STATUS2
INPUT2
GND
+5V
μ
C
R
prot
R
prot
R
prot
D
GND
R
GND
V
GND
Application information VND830MSP-E
18/28 Doc ID 10903 Rev 4
values. This shift varies depending on how many devices are ON in the case of several
high-side drivers sharing the same R
GND
.
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize solution 2 (see Section 3.1.2).
3.1.2 Solution 2: diode (D
GND
) in the ground line
A resistor (R
GND
= 1 kΩ) should be inserted in parallel to D
GND
if the device drives an
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network produces a shift (600 mV) in the input threshold
and in the status output values if the microprocessor ground is not common to the device
ground. This shift does not vary if more than one HSD shares the same diode/resistor
network.
3.2 Load dump protection
D
ld
is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the
V
CC
max DC rating. The same applies if the device is subject to transients on the V
CC
line
that are greater than the ones shown in Table 13.
3.3 MCU I/Os protection
If a ground protection network is used and negative transient are present on the V
CC
line,
the control pins are pulled negative. ST suggests to insert a resistor (R
prot
) in line to prevent
the microcontroller I/Os pins to latch-up.
The value of these resistors is a compromise between the leakage current of microcontroller
and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of
microcontroller I/Os.
-V
CCpeak
/I
latchup
R
prot
(V
OH
µ
C
-V
IH
-V
GND
) / I
IHmax
Calculation example:
For V
CCpeak
= -100 V and I
latchup
20 mA; V
OH
µ
C
4.5 V
5kΩ R
prot
65 kΩ.
Recommended values:
R
prot
=10 kΩ.
3.4 Open-load detection in off-state
Off-state open-load detection requires an external pull-up resistor (R
PU
) connected between
OUTPUT pin and a positive supply voltage (V
PU
) like the +5 V line used to supply the
microprocessor.
The external resistor has to be selected according to the following requirements:

VND830MSPTR-E

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Gate Drivers Double Ch High Side
Lifecycle:
New from this manufacturer.
Delivery:
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