MICROSEMI CORP. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT
VERSION PLEASE CHECK OUR WEB SITE
AT WWW. MICROSEMI.COM OR CONTACT OUR FACTORY DIRECT.
Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324
GENERAL DESCRIPTION
The 1014-6A is an internally matched, COMMON BASE transistor capable of
providing 6 Watts of CW or pulsed RF output power across the band 1000 to
1400 MHz. This hermetically solder-sealed transistor is specifically designed
for microwave broadband applications. It utilizes gold metallization and
diffused emitter ballasting to provide high reliability and supreme ruggedness.
CASE OUTLINE
55LV, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C 19 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage 50 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 1.0 Amps
Maximum Temperatures
Storage Temperature - 65 to + 200
o
C
Operating Junction Temperature + 200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pg
η
ηη
ηc
VSWR
1
Power Out
Power Gain
Collector Efficiency
Load Mismatch Tolerance
Freq = 1400 MHz
Vcc = 28 Volts
Pin = 1.2 Watts
Pulse Width = CW
6
7.0
7.5
40
10:1
Watts
dB
%
FUNCTIONAL CHARACTERISTICS @ 25°
°°
°C
Bvces
BVebo
θ
θθ
θjc
1
Collector to Emitter Breakdown
Emitter to Base Breakdown
Thermal Resistance
Ic = 25 mA
Ie = 3 mA
50
3.5
9.0
Volts
Volts
o
C/W
1014-6A
6 Watts - 28 Volts, Class C
Microwave 1000 - 1400 MHz
1014-6A R2
