Characteristics SM4TY
4/12 DocID17862 Rev 4
Figure 3. Peak pulse power dissipation versus
initial junction temperature
Figure 4. Peak pulse power versus exponential
pulse duration
(T
j
initial = 25 °C)
0
100
200
300
400
500
0 25 50 75 100 125 150 175
P (W)
PP
T (°C)
j
Pulse = 10/1000 µs
0.1
1.0
10.0
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01
P (kW)
PP
t
p
(ms)
Figure 5. Clamping voltage versus peak pulse
current (exponential waveform, maximum
values)
Figure 6. Junction capacitance versus reverse
applied voltage for unidirectional types (typical
values)
I (A)
PP
0.1
1.0
10.0
100.0
1000.0
1 10 100 1000
10/1000 µs
8/20 µs
V (V)
CL
T initial = 25 °C
j
SM4T6V7AY/CAY
SM4T30AY/CAY
SM4T82AY/CAY
C(pF)
10
100
1000
10000
1 10 100 1000
SM4T6V7AY
SM4T30AY
SM4T82AY
V (V)
R
F = 1 Mhz
V = 30 mV
T = 25 °C
OSC RMS
j
Figure 7. Junction capacitance versus reverse
applied voltage for bidirectional types (typical
values)
Figure 8. Relative variation of thermal
impedance, junction to ambient, versus pulse
duration
C(pF)
10
100
1000
10000
1 10 100 1000
SM4T6V7CAY
SM4T30CAY
SM4T82CAY
V (V)
R
F = 1 Mhz
V = 30 mV
T = 25 °C
OSC RMS
j
0.01
0.10
1.00
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
Recommended pad layout
Z/R
th(j-a) th(j-a)
t
p
(s)
Printed circuit board FR4,
copper thickness = 35 µm
