OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

STPTIC-27G2C5

P1-P3P4-P6P7-P9P10-P11
This is information on a product in full production.
July 2015 DocID028148 Rev 1 1/11
STPTIC-27G2
Parascan™ tunable integrated capacitor
Datasheet - production data
Features
• High power capability
• 5:1 tuning range
• High linearity
• High quality factor (Q)
• Low leakage current
• Compatible with high voltage control IC
(STHVDAC series)
• Available in wafer level chip scale package:
– WLCSP package 0.61 x 0.66 x 0.3 mm
• ECOPACK
®
2 compliant component
Benefit
• RF tunable passive implementation in mobile
phones to optimize antenna radiated
performance
Applications
• Cellular antenna open loop tunable matching
network in multi-band GSM/WCDMA/LTE
mobile phone
• Open loop tunable RF filters
Description
The ST integrated tunable capacitor offers
excellent RF performance, low power
consumption and high linearity required in
adaptive RF tuning applications. The fundamental
building block of PTIC is a tunable material called
Parascan
™, which is a version of barium
strontium titanate (BST) developed by Paratek
Microwave.
BST capacitors are tunable capacitors intended
for use in mobile phone application and dedicated
to RF tunable applications. These tunable
capacitors are controlled through an extended
bias voltage ranging from 1 to 24 V. The
implementation of BST tunable capacitor in
mobile phones enables significant improvement
in terms of radiated performance making the
performance almost insensitive to the external
environment.
Figure 1. PTIC functional block diagram
TM: Parascan is a trademark of Paratek Microwave Inc.
6
7
37,&
:/&63PPSLWFK
37,&
5) 5)
%LDV
www.st.com
Electrical characteristics STPTIC-27G2
2/11 DocID028148 Rev 1
1 Electrical characteristics
Table 1. Absolute maximum ratings (limiting values)
Symbol Parameter Rating Unit
P
IN
Input peak power RF
IN
(CW mode)/all RF ports +40 dBm
V
ESD(HBM)
Human body model, JESD22-A114-B, all I/O Class 1B
(1)
1. Class 1B defined as passing 500 V, but fails after exposure to 1000V ESD pulse.
V
V
ESD(MM)
Machine model, JESD22-A115-A, all I/O 100 V
T
device
Device temperature +125
°C
T
stg
Storage temperature -55 to +150
V
x
Bias voltage 25 V
Table 2. Recommended operating conditions
Symbol Parameter
Rating
Unit
Min. Typ. Max.
P
IN
RF input power +33 dBm
F
OP
Operating frequency 700 2700 MHz
T
device
Device temperature +100
°C
T
OP
Operating temperature -30 +85
V
BIAS
Bias voltage 1 24 V
DocID028148 Rev 1 3/11
STPTIC-27G2 Electrical characteristics
11
Table 3. Representative performance (T
amb
= 25 °C otherwise specified)
Symbol Parameter Conditions
Value
Unit
Min Typ Max
C
1V
capacitor at 1 V bias STPTIC-27G2 2.82 3.2 3.58 pF
C
2V
capacitor at 2 V bias STPTIC-27G2 2.7 pF
C
24V
capacitor at 24 V bias STPTIC-27G2 0.52 0.57 0.62 pF
ΔC Tuning range Ratio between C
1V
/C
24V
(1)
5/1
I
L
Leakage current Measured with V
bias
= 24 V 100 nA
Q
LB
Quality factor Measured at 700 MHz at 2 V 55 65
Q
HB
Quality factor Measured at 2700 MHz at 2 V 35 50
IP3 Third order intercept point
V
bias
= 1 V
(2)(4)
52 60
dBm
V
bias
= 24 V
(2)(4)
75
H2 Second harmonic
V
bias
= 1 V
(3)(4)
-65 -45
dBm
V
bias
= 24 V
(3)(4)
-75
H3 Third harmonic
V
bias
= 1 V
(3)(4)
-35 -30
dBm
V
bias
= 24 V
(3)(4)
-65
t
T
Transition time
Average for any transition between C
min
to C
max
(5)
40
µs
Average transition between C
max
to C
min
(5)
20
1. Measured at low frequency
2. F
1
= 894 MHz, F
2
= 849 MHz, P
1
= +25 dBm, P
2
= +25 dBm, 2f
1
- f
2
= 939 MHz
3. 850 MHz, P
in
= +34 dBm
4. IP3 and harmonics are measured in the shunt configuration in a 50
Ω environment
5. One or both of RF
in
and RF
out
must be connected to DC ground, using the HVDAC turbo mode
P1-P3P4-P6P7-P9P10-P11

STPTIC-27G2C5

Mfr. #:
Buy STPTIC-27G2C5
Manufacturer:
STMicroelectronics
Description:
Trimmer / Variable Capacitors 2p7 Tunable capacitor
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet