1999 May 21 2
NXP Semiconductors Product data sheet
NPN high-voltage transistor PZTA42
FEATURES
• Low current (max. 100 mA)
• High voltage (max. 300 V).
APPLICATIONS
• Telephony and professional communication equipment.
DESCRIPTION
NPN high-voltage transistor in a SOT223 plastic package.
PNP
complement: PZTA92.
PINNING
PIN DESCRIPTION
1 base
2,4 collector
3 emitter
Fig.1 Simplified outline (SOT223) and symbol.
handbook, halfpage
4
123
MAM287
Top view
3
2, 4
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For
other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 300 V
V
CEO
collector-emitter voltage open base − 300 V
V
EBO
emitter-base voltage open collector − 6 V
I
C
collector current (DC) − 100 mA
I
CM
peak collector current − 200 mA
I
BM
peak base current − 100 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 1.2 W
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
