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BUK9624-55A,118
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
BUK9624-55A
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 02 — 31 January 201
1
6 of 13
NXP Semiconductors
BUK9624-55A
N-channel T
renchMOS logic level FET
Fig 5.
Output charac
teristics: drain curren
t as a
function of drain-source voltage; typica
l values
Fig 6.
Drain-source on
-state resistance as a function
of gate-source voltage; typical value
s
Fig 7.
Sub-threshold d
rain current as a function of
gate-source voltage
Fig
8.
Input, output an
d reverse transfer cap
acitances
as a function of d
rain-source voltage; ty
pical
values
03na05
0
20
40
60
80
100
120
140
160
180
0246
8
1
0
V
DS
(V)
I
D
(A)
2.2
3
4
5
6
7
10
8
V
GS
(V) = 9
03na03
10
15
20
25
30
35
40
45
2468
1
0
V
GS
(V)
R
DSon
(m
Ω
)
03na18
0
0.5
1
1.5
2
2.5
3
max
typ
min
I
D
V
GS
(V)
10
−
6
10
−
5
10
−
4
10
−
3
10
−
2
10
−
1
(A)
03na09
0
500
1000
1500
2000
2500
3000
3500
4000
10
−
2
10
−
1
1
10
10
2
V
DS
(V)
C
(pF)
C
iss
C
oss
C
rss
BUK9624-55A
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 02 — 31 January 201
1
7 of 13
NXP Semiconductors
BUK9624-55A
N-channel T
renchMOS logic level FET
Fig 9.
Transfer characteristics: drain cu
rrent as a
function of gate-source voltag
e; typical values
Fig 10.
Gate-source voltage as a function of gate
charge; typical values
Fig 11.
Gate-source
threshold
voltage as a function
of
junction temperature
Fig 12.
Drain-source on-state resistanc
e as a function
of drain current; typical values
03na00
0
20
40
60
80
100
0246
V
GS
(V)
I
D
(A)
T
j
= 25
°
C
T
j
= 175
°
C
03na02
0
1
2
3
4
5
6
01
0
2
0
3
0
4
0
Q
G
(nC)
V
GS
(V)
V
DD
= 44 V
V
DD
= 14 V
03na17
0
0.5
1
1.5
2
2.5
−
60
−
20
20
60
100
140
180
max
typ
min
V
GS(th)
T
j
(
°
C)
(V)
03na06
10
15
20
25
30
35
40
45
50
10
30
50
70
90
I
D
(A)
R
DSon
(m
Ω
)
5
4
3.8
3.6
3.4
3.2
3
V
GS
(V)=
BUK9624-55A
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 02 — 31 January 201
1
8 of 13
NXP Semiconductors
BUK9624-55A
N-channel T
renchMOS logic level FET
Fig 13.
Normalized drain-source on-state resistance
factor as a
function of junctio
n temperature
Fig 14.
Reverse diode curre
nt as a function of reverse
diode voltage; typical valu
es
T
j
(
°
C)
−
60
180
120
06
0
03aa28
1.2
0.6
1.8
2.4
a
0
03na01
0
20
40
60
80
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
SD
(V)
I
S
(A)
T
j
= 175
°
CT
j
= 25
°
C
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
BUK9624-55A,118
Mfr. #:
Buy BUK9624-55A,118
Manufacturer:
Nexperia
Description:
MOSFET TAPE13 PWR-MOS
Lifecycle:
New from this manufacturer.
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