BU25H06, BU25H08
www.vishay.com
Vishay General Semiconductor
Revision: 29-Aug-17
1
Document Number: 87650
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Enhanced isoCink+™ Bridge Rectifiers
FEATURES
• UL recognition file number E312394
• Thin single in-line package
• Superior thermal conductivity
• Glass passivated chip junction
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances and
white-goods applications.
MECHANICAL DATA
Case: BU
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 and M3 suffix meet JESD 201 class 1A whisker test
Polarity: as marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
Notes
(1)
With 60 W air cooled heatsink
(2)
Without heatsink, free air
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
PRIMARY CHARACTERISTICS
I
F(AV)
25 A
V
RRM
600 V, 800 V
I
FSM
300 A
I
R
5 μA
V
F
at I
F
= 12.5 A 0.87 V
T
J
max. 175 °C
Package BU
Circuit configuration In-line
Case Style BU
+ ~~ -
isoCink+™
Available
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL BU25H06 BU25H08 UNIT
Maximum repetitive peak reverse voltage V
RRM
600 800 V
Average rectified forward current (Fig. 1, 2)
T
C
= 60 °C
(1)
I
O
25
A
T
A
= 25 °C
(2)
3.5
Non-repetitive peak forward surge current, 8.3 ms single sine-wave, T
J
= 25 °C I
FSM
300 A
Rating for fusing (t < 8.3 ms) T
J
= 25 °C I
2
t 373 A
2
s
Operating junction and storage temperature range T
J
, T
STG
-55 to +175 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Maximum instantaneous forward
voltage per diode
(1)
I
F
= 12.5 A
T
A
= 25 °C
V
F
0.97 1.05
V
T
A
= 125 °C 0.87 0.95
Maximum reverse current per diode rated V
R
T
A
= 25 °C
I
R
-5.0
μA
T
A
= 125 °C 120 350
Typical junction capacitance per diode 4.0 V, 1 MHz C
J
125 - pF
