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NTSAF345T3G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2016
November, 2016 − Rev. 2
1 Publication Order Number:
NTSAF345/D
NTSAF345, NRVTSAF345
Trench-based Schottky
Rectifier
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
• Fast Switching with Exceptional Temperature Stability
• Low Power Loss and Lower Operating Temperature
• Higher Efficiency for Achieving Regulatory Compliance
• High Surge Capability
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Switching Power Supplies including Tablet Adapters, and Flat Panel
Display
• High Frequency and DC−DC Converters
• Freewheeling and OR−ing diodes
• Reverse Battery Protection
• Instrumentation
Mechanical Characteristics:
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
• Lead Finish: 100% Matte Sn (Tin)
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL 1 Requirements
• Weight: 95 mg (Approximately)
Device Package Shipping
†
ORDERING INFORMATION
SMA−FL
CASE 403AA
STYLE 6
TRENCH SCHOTTKY
RECTIFIER
3.0 AMPERE
45 VOLTS
www.onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NTSAF345T3G SMA−FL
(Pb−Free)
5000 / Tape &
Reel
3AR = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING DIAGRAM
NRVTSAF345T3G SMA−FL
(Pb−Free)
5000 / Tape &
Reel
3AR
AYWWG
NTSAF345, NRVTSAF345
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
45 V
Average Rectified Forward Current
(T
L
= 112°C)
I
O
3.0
A
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz) T
L
= 103°C
I
FRM
6.0 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
100
A
Storage Temperature Range T
stg
−65 to +150 °C
Operating Junction Temperature (Note 1) T
J
−65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
q
JA
.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Lead (Note 2)
Y
JCL
25 °C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
R
q
JA
90 °C/W
2. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board.
ELECTRICAL CHARACTERISTICS
Rating Symbol Typ Max Unit
Instantaneous Forward Voltage (Note 3)
(I
F
= 3 A, T
J
= 25°C)
(I
F
= 3 A, T
J
= 125°C)
V
F
0.482
0.4
0.63
0.55
V
Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 125°C)
I
R
1.75
1.45
7.5
3
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%.
NTSAF345, NRVTSAF345
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V) V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
0.60.40.2
0.1
1
10
100
0.90.60.50.30.20.1
0.1
1
10
100
Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V) V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
4030252015105 45353015105
Figure 5. Typical Junction Capacitance
V
R
, REVERSE VOLTAGE (V)
0.1
100
1000
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)C, JUNCTION CAPACITANCE (pF)
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
35 45
1.E−07
1.E−06
1.E−05
1.E−04
1.E−03
1.E−01
20 25
1.E−07
1.E−04
1.E−03
1.E+00
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
10
T
A
= 125°C
T
A
= −55°C
T
A
= 25°C
T
A
= 150°C
T
A
= 125°C
T
A
= −55°C
T
A
= 25°C
T
A
= 125°C
T
A
= 25°C
Figure 6. Current Derating per Device
T
C
, CASE TEMPERATURE (°C)
8060 140120200
0
1
2
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
6
40 100
Square Wave
DC
R
q
JC
= 26.9°C/W
T
J
= 25°C
0.4 0.7
40
T
A
= 150°C
T
A
= 150°C
1
0.80.50.30.1
T
A
= 125°C
T
A
= 25°C
T
A
= 150°C
1.E−06
1.E−02
1.E−05
1.E−02
1.E−01
3
4
5
0.7 0.8
P1-P3P4-P5

NTSAF345T3G

Mfr. #:
Buy NTSAF345T3G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 3A45V LOW VFENCH REC
Lifecycle:
New from this manufacturer.
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