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Document Number: 73132
S11-2130 Rev. B, 31-Oct-11
Vishay Siliconix
SUP40N25-60
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min .
Typ.
Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
DS
= 0 V, I
D
= 250 µA
250
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
24
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 30 V
± 250 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 250 V, V
GS
= 0 V
1
µA
V
DS
= 250 V, V
GS
= 0 V, T
J
= 125 °C
50
V
DS
= 250 V, V
GS
= 0 V, T
J
= 175 °C
250
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V
70 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 20 A
0.049 0.060
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 °C
0.121
V
GS
= 10 V, I
D
= 20 A, T
J
= 175 °C
0.163
V
GS
= 6 V, I
D
= 15 A
0.051 0.064
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 20 A
70 S
Dynamic
b
Input Capacitance
C
iss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
5000
pFOutput Capacitance
C
oss
300
Reverse Transfer Capacitance
C
rss
170
Total Gate Charge
c
Q
g
V
DS
= 125 V, V
GS
= 10 V, I
D
= 45 A
95 140
nC
Gate-Source Charge
c
Q
gs
28
Gate-Drain Charge
c
Q
gd
34
Gate Resistance
R
g
f = 1 MHz 1.6
Tur n - O n De l ay Tim e
c
t
d(on)
V
DD
= 100 V, R
L
= 2.78
I
D
45 A, V
GEN
= 10 V, R
g
= 2.5
22 35
ns
Rise Time
c
t
r
220 330
Turn-Off Delay Time
c
t
d(off)
40 60
Fall Time
c
t
f
145 220
Source-Drain Diode Ratings and Characteristics (T
C
= 25 °C)
b
Continuous Current
I
S
45
A
Pulsed Current
I
SM
70
Forward Voltage
a
V
SD
I
F
= 45 A, V
GS
= 0 V
11.5V
Reverse Recovery Time
t
rr
I
F
= 45 A, di/dt = 100 A/µs
150 225 ns
Peak Reverse Recovery Current
I
RM(REC)
12 18 A
Reverse Recovery Charge
Q
rr
0.9 2 µC
