NSBC114YPDP6T5G

P1-P3 P4-P6 P7-P9 P10-P10

MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6

www.onsemi.com

4

TYPICAL CHARACTERISTICS − NPN TRANSISTOR

MUN5314DW1, NSBC114YPDXV6

1000

100

10

1

Figure 2. V

CE(sat)

vs. I

C

1002030

I

C

, COLLECTOR CURRENT (mA)

40 50

Figure 3. DC Current Gain

Figure 4. Output Capacitance

01020

50

I

C

, COLLECTOR CURRENT (mA)

I

C

, COLLECTOR CURRENT (mA)

Figure 5. Output Current vs. Input Voltage

100

10

1

0.1

0.01

0.001

01234

V

in

, INPUT VOLTAGE (V)

56 78910

Figure 6. Input Voltage vs. Output Current

V

R

, REVERSE VOLTAGE (V)

V

CE(sat)

, COLLECTOR−EMITTER VOLTAGE (V)

I

C

/I

B

= 10

−55°C

150°C

25°C

h

FE

, DC CURRENT GAIN

f = 10 kHz

I

E

= 0 A

T

A

= 25°C

C

ob

, OUTPUT CAPACITANCE (pF)

V

O

= 5 V

150°C

−55°C

25°C

I

C

, COLLECTOR CURRENT (mA)

V

O

= 0.2 V

V

in

, INPUT VOLTAGE (V)

25°C

1

0.1

0.01

4030

0.1 1

10010

V

CE

= 10 V

25°C

150°C

−55°C

3.6

3.2

2.8

2.4

2

1.6

1.2

0.8

0.4

0

010 20304050

100

10

1

0.1

150°C

−55°C

MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6

www.onsemi.com

5

TYPICAL CHARACTERISTICS − PNP TRANSISTOR

MUN5314DW1, NSBC114YPDXV6

1000

100

10

1

Figure 7. V

CE(sat)

vs. I

C

1002030

I

C

, COLLECTOR CURRENT (mA)

40 50

Figure 8. DC Current Gain

Figure 9. Output Capacitance

01020

50

I

C

, COLLECTOR CURRENT (mA)

I

C

, COLLECTOR CURRENT (mA)

Figure 10. Output Current vs. Input Voltage

100

10

1

0.1

0.01

0.001

01234

V

in

, INPUT VOLTAGE (V)

56 7

Figure 11. Input Voltage vs. Output Current

V

R

, REVERSE VOLTAGE (V)

V

CE(sat)

, COLLECTOR−EMITTER VOLTAGE (V)

I

C

/I

B

= 10

−55°C

150°C

25°C

h

FE

, DC CURRENT GAIN

f = 10 kHz

I

E

= 0 A

T

A

= 25°C

C

ob

, OUTPUT CAPACITANCE (pF)

V

O

= 5 V

150°C

−55°C

25°C

I

C

, COLLECTOR CURRENT (mA)

V

O

= 0.2 V

V

in

, INPUT VOLTAGE (V)

25°C

1

0.1

0.01

4030

0.1 1

10010

V

CE

= 10 V

25°C

150°C

−55°C

10

010 20304050

100

10

1

0.1

150°C

−55°C

9

8

7

6

5

4

3

2

1

0

MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6

www.onsemi.com

6

TYPICAL CHARACTERISTICS − NPN TRANSISTOR

NSBC114YPDP6

1000

100

10

1

Figure 12. V

CE(sat)

vs. I

C

1002030

I

C

, COLLECTOR CURRENT (mA)

40 50

Figure 13. DC Current Gain

Figure 14. Output Capacitance

01020

50

I

C

, COLLECTOR CURRENT (mA)

I

C

, COLLECTOR CURRENT (mA)

Figure 15. Output Current vs. Input Voltage

100

10

1

0.1

0.01

0.001

01234

V

in

, INPUT VOLTAGE (V)

56 7

Figure 16. Input Voltage vs. Output Current

V

R

, REVERSE VOLTAGE (V)

V

CE(sat)

, COLLECTOR−EMITTER VOLTAGE (V)

I

C

/I

B

= 10

−55°C

150°C

25°C

h

FE

, DC CURRENT GAIN

f = 10 kHz

I

E

= 0 A

T

A

= 25°C

C

ob

, OUTPUT CAPACITANCE (pF)

V

O

= 5 V

150°C

−55°C

25°C

I

C

, COLLECTOR CURRENT (mA)

V

O

= 0.2 V

V

in

, INPUT VOLTAGE (V)

25°C

1

0.1

0.01

4030

0.1 1

10010

V

CE

= 10 V

25°C

150°C

−55°C

2.4

010 20304050

100

10

1

0.1

150°C

−55°C

2

1.6

1.2

0.8

0.4

0

P1-P3 P4-P6 P7-P9 P10-P10

NSBC114YPDP6T5G

Mfr. #:

Buy NSBC114YPDP6T5G

Manufacturer:

ON Semiconductor

Description:

Bipolar Transistors - Pre-Biased COMP NBRT/PBRT TR SOT-963

Lifecycle:

New from this manufacturer.

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