Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
SMUN5314DW1T1G
P1-P3
P4-P6
P7-P9
P10-P10
MUN5314DW1, NSBC1
14YPDXV6, NSBC1
14YPDP6
www
.onsemi.com
4
TYPICAL CHARACTERISTICS
−
NPN TRANSIST
OR
MUN5314DW1, NSBC1
14YPDXV6
1000
100
10
1
Figure 2. V
CE(sat)
vs. I
C
10
02
0
3
0
I
C
, COLLECTOR CURRENT (mA)
40
50
Figure 3. DC Current Gain
Figure 4. Output Capacitance
01
0
2
0
50
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Output Current vs. Input V
oltage
100
10
1
0.1
0.01
0.001
012
3
4
V
in
, INPUT VOL
T
AGE (V)
56
78
9
1
0
Figure 6. Input V
oltage vs. Output Current
V
R
, REVERSE VOL
T
AGE (V)
V
CE(sat)
, COLLECTOR
−
EMITTER VOL
T
AGE (V)
I
C
/I
B
= 10
−
55
°
C
150
°
C
25
°
C
h
FE
, DC CURRENT GAIN
f = 10 kHz
I
E
= 0 A
T
A
= 25
°
C
C
ob
, OUTPUT CAP
ACIT
ANCE (pF)
V
O
= 5 V
150
°
C
−
55
°
C
25
°
C
I
C
, COLLECTOR CURRENT (mA)
V
O
= 0.2 V
V
in
, INPUT VOL
T
AGE (V)
25
°
C
1
0.1
0.01
40
30
0.1
1
100
10
V
CE
= 10 V
25
°
C
150
°
C
−
55
°
C
3.6
3.2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
01
0
2
0
3
0
4
0
5
0
100
10
1
0.1
150
°
C
−
55
°
C
MUN5314DW1, NSBC1
14YPDXV6, NSBC1
14YPDP6
www
.onsemi.com
5
TYPICAL CHARACTERISTICS
−
PNP TRANSIST
OR
MUN5314DW1, NSBC1
14YPDXV6
1000
100
10
1
Figure 7. V
CE(sat)
vs. I
C
10
02
0
3
0
I
C
, COLLECTOR CURRENT (mA)
40
50
Figure 8. DC Current Gain
Figure 9. Output Capacitance
01
0
2
0
50
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 10. Output Current vs. Input V
oltage
100
10
1
0.1
0.01
0.001
012
3
4
V
in
, INPUT VOL
T
AGE (V)
56
7
Figure 1
1. Input V
oltage vs. Output Current
V
R
, REVERSE VOL
T
AGE (V)
V
CE(sat)
, COLLECTOR
−
EMITTER VOL
T
AGE (V)
I
C
/I
B
= 10
−
55
°
C
150
°
C
25
°
C
h
FE
, DC CURRENT GAIN
f = 10 kHz
I
E
= 0 A
T
A
= 25
°
C
C
ob
, OUTPUT CAP
ACIT
ANCE (pF)
V
O
= 5 V
150
°
C
−
55
°
C
25
°
C
I
C
, COLLECTOR CURRENT (mA)
V
O
= 0.2 V
V
in
, INPUT VOL
T
AGE (V)
25
°
C
1
0.1
0.01
40
30
0.1
1
100
10
V
CE
= 10 V
25
°
C
150
°
C
−
55
°
C
10
01
0
2
0
3
0
4
0
5
0
100
10
1
0.1
150
°
C
−
55
°
C
9
8
7
6
5
4
3
2
1
0
MUN5314DW1, NSBC1
14YPDXV6, NSBC1
14YPDP6
www
.onsemi.com
6
TYPICAL CHARACTERISTICS
−
NPN TRANSIST
OR
NSBC1
14YPDP6
1000
100
10
1
Figure 12. V
CE(sat)
vs. I
C
10
02
0
3
0
I
C
, COLLECTOR CURRENT (mA)
40
50
Figure 13. DC Current Gain
Figure 14. Output Capacitance
01
0
2
0
50
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 15. Output Current vs. Input V
oltage
100
10
1
0.1
0.01
0.001
012
3
4
V
in
, INPUT VOL
T
AGE (V)
56
7
Figure 16. Input V
oltage vs. Output Current
V
R
, REVERSE VOL
T
AGE (V)
V
CE(sat)
, COLLECTOR
−
EMITTER VOL
T
AGE (V)
I
C
/I
B
= 10
−
55
°
C
150
°
C
25
°
C
h
FE
, DC CURRENT GAIN
f = 10 kHz
I
E
= 0 A
T
A
= 25
°
C
C
ob
, OUTPUT CAP
ACIT
ANCE (pF)
V
O
= 5 V
150
°
C
−
55
°
C
25
°
C
I
C
, COLLECTOR CURRENT (mA)
V
O
= 0.2 V
V
in
, INPUT VOL
T
AGE (V)
25
°
C
1
0.1
0.01
40
30
0.1
1
100
10
V
CE
= 10 V
25
°
C
150
°
C
−
55
°
C
2.4
01
0
2
0
3
0
4
0
5
0
100
10
1
0.1
150
°
C
−
55
°
C
2
1.6
1.2
0.8
0.4
0
P1-P3
P4-P6
P7-P9
P10-P10
SMUN5314DW1T1G
Mfr. #:
Buy SMUN5314DW1T1G
Manufacturer:
ON Semiconductor
Description:
Diodes - General Purpose, Power, Switching SS BR XSTR DUAL 50V
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
NSVBC114YPDXV6T1G
MUN5314DW1T1G
NSBC114YPDXV6T5G
NSBC114YPDXV6T1G
NSBC114YPDP6T5G
SMUN5315DW1T1G
NSVMUN5314DW1T3G
NSVB114YPDXV6T1G
SMUN5314DW1T1G