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IPG20N06S2L35ATMA1

P1-P3P4-P6P7-P9
IPG20N06S2L-35
OptiMOS
®
Power-Transistor
Features
• Dual N-channel Logic Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
one channel active
2)
I
D
T
C
=25 °C, V
GS
=10 V
1)
20 A
T
C
=100 °C, V
GS
=10 V
20
Pulsed drain current
2)
one channel active
I
D,pulse
-
80
Avalanche energy, single pulse
2, 4)
E
AS
I
D
=10A
100 mJ
Avalanche current, single pulse
4)
I
AS
-
15 A
Gate source voltage
V
GS
- ±20 V
Power dissipation
one channel active
P
tot
T
C
=25 °C
65 W
Operating and storage temperature
T
j
, T
stg
- -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 - - 55/175/56
Value
V
DS
55 V
R
DS
(
on
)
,max
4)
35
mΩ
I
D
20 A
Product Summary
Type Package Marking
IPG20N06S2L-35 PG-TDSON-8-4 2N06L35
PG-TDSON-8-4
Rev. 1.0 page 1 2009-09-07
IPG20N06S2L-35
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
2)
Thermal resistance, junction - case
R
thJC
- - - 2.3 K/W
SMD version, device on PCB
R
thJA
minimal footprint - 100 -
6 cm
2
cooling area
3)
-60-
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
= 1 mA
55 - - V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=27 µA
1.2 1.6 2.0
Zero gate voltage drain current
4)
I
DSS
V
DS
=55 V, V
GS
=0 V,
T
j
=25 °C
- 0.01 1 µA
V
DS
=55 V, V
GS
=0 V,
T
j
=125 °C
2)
- 1 100
Gate-source leakage current
4)
I
GSS
V
GS
=20 V, V
DS
=0 V
- 1 100 nA
Drain-source on-state resistance
4)
R
DS(on)
V
GS
=4.5 V, I
D
=10A
-3544
mΩ
V
GS
=10 V, I
D
=15A
-2835
Values
Rev. 1.0 page 2 2009-09-07
IPG20N06S2L-35
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics
2)
Input capacitance
4)
C
iss
- 610 790 pF
Output capacitance
4)
C
oss
- 180 230
Reverse transfer capacitance
4)
C
rss
- 65 100
Turn-on delay time
t
d(on)
-3-ns
Rise time
t
r
-5-
Turn-off delay time
t
d(off)
-25-
Fall time
t
f
-15-
Gate Char
g
e Characteristics
2, 4)
Gate to source charge
Q
gs
- 2 2.6 nC
Gate to drain charge
Q
gd
- 6.5 10
Gate charge total
Q
g
-1823
Gate plateau voltage
V
plateau
- 3.5 - V
Reverse Diode
Diode continous forward current
2)
one channel active
I
S
- - 20 A
Diode pulse current
2)
one channel active
I
S,pulse
--80
Diode forward voltage
V
SD
V
GS
=0 V, I
F
=15 A,
T
j
=25 °C
- 1.0 1.3 V
Reverse recovery time
2)
t
rr
V
R
=27.5 V, I
F
=I
S
,
di
F
/dt =100 A/µs
-40-ns
Reverse recovery charge
2, 4)
Q
rr
-40-nC
4)
Per channel
T
C
=25 °C
Values
V
GS
=0 V, V
DS
=25 V,
f =1 MHz
V
DD
=27.5 V,
V
GS
=10 V, I
D
=20 A,
R
G
=11 Ω
V
DD
=44 V, I
D
=20 A,
V
GS
=0 to 10 V
2)
Specified by design. Not subject to production test.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
1)
Current is limited by bondwire; with an R
thJC
=2.3 K/W the chip is able to carry 30.4A at 25°C.
Rev. 1.0 page 3 2009-09-07
P1-P3P4-P6P7-P9

IPG20N06S2L35ATMA1

Mfr. #:
Buy IPG20N06S2L35ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET 2N-CH 55V 20A TDSON-8-4
Lifecycle:
New from this manufacturer.
Delivery:
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