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2N3585

P1-P2
TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/384
Devices Qualified Level
2N3584 2N3585
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
2N3584
2N3585
Units
Collector-Emitter Voltage
V
CEO
250 300 Vdc
Collector-Base Voltage
V
CBO
375 500 Vdc
Collector-Base Voltage
V
CER
300 400 Vdc
Emitter-Base Voltage
V
EBO
6.0 Vdc
Base Current I
B
1.0 Adc
Collector Current
I
C
2.0 Adc
Total Power Dissipation @ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
P
T
2.5
35
W
W
Operating & Storage Junction Temperature Range
T
J
,
T
stg
-65 to +200
0
C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case
R
θJC
5.0
0
C/W
1) Derate linearly @ 14.85 mW/
0
C for T
A
> +25
0
C
2) Derate linearly @ 200 mW/
0
C for T
C
> +25
0
C
TO-66* (TO-213AA)
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc 2N3584
2N3585
V
(BR)
CEO
250
300
Vdc
Collector-Base Breakdown Voltage
I
C
= 15 mAdc 2N3584
2N3585
V
(BR)
CER
375
500
Vdc
Collector-Emitter Cutoff Current
V
CE
= 150 Vdc
I
CEO
5.0
mAdc
Collector-Emitter Cutoff Current
V
CE
= 300 Vdc, V
BE
= 1.5 Vdc 2N3584
V
CE
= 400 Vdc, V
BE
= 1.5 Vdc 2N3585
I
CEX
1.0
1.0
mAdc
Emitter-Base Cutoff Current
V
EB
= 6.0 Vdc
I
EBO
0.5
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N3584, 2N3585 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
I
C
= 1.0 Adc, V
CE
= 10 Vdc
I
C
= 100 mAdc, V
CE
= 10 Vdc
h
FE
25
40
100
Collector-Emitter Saturation Voltage
I
C
= 1.0 Adc, I
B
= 0.125 Adc
V
CE(sat)
0.75
Vdc
Base-Emitter Saturation Voltage
I
C
= 1.0 Adc, I
B
= 0.1 Adc
V
BE(sat)
1.4
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 200 mAdc, V
CE
= 10 Vdc, f = 5.0 MHz
h
fe
3.0
15
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 1.0 Adc, V
CE
= 10 Vdc, f = 1.0 kHz
h
fe
25
200
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz ≤ f ≤ 1.0 MHz
C
obo
120
pF
SWITCHING CHARACTERISTICS
Turn-On Time
V
CC
= 30 Vdc; I
C
= 1.0 Adc; I
B
= 100 mAdc; R
C
= 29 Ω
t
on
3.0
µs
Turn-Off Time
V
CC
= 30 Vdc; I
C
= 1.0 Adc; I
B
= -I
B
= 100 mAdc; R
C
= 29 Ω
t
off
7.0
µs
SAFE OPERATING AREA
DC Tests
T
C
= +25
0
C, 1 Cycle, t = 1.0 s
Test 1
V
CE
= 17.5 Vdc, I
C
= 2.0 Adc
Test 2
V
CE
= 100 Vdc, I
C
= 350 mAdc
Test 3
V
CE
= 250 Vdc, I
C
= 37 mAdc 2N3584
V
CE
= 300 Vdc, I
C
= 17 mAdc 2N3585
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
P1-P2

2N3585

Mfr. #:
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Manufacturer:
Central Semiconductor
Description:
Bipolar Transistors - BJT NPN High Power
Lifecycle:
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