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MBR460MFST1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2013
June, 2013 − Rev. 0
1 Publication Order Number:
MBR460MFS/D
MBR460MFS, NRVB460MFS
SWITCHMODE
Power Rectifiers
These state−of−the−art devices have the following features:
Features
• Low Power Loss / High Efficiency
• New Package Provides Capability of Inspection and Probe After
Board Mounting
• Guardring for Stress Protection
• Low Forward Voltage Drop
• 175°C Operating Junction Temperature
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free and Halide−Free Devices
Mechanical Characteristics:
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
• Lead Finish: 100% Matte Sn (Tin)
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL 1 Requirements
Applications
• Ideally Suited for use as an Output Rectifier in High Frequency
(up to 2 MHz) Automotive and Non−Automotive Applications
• Output Rectification in Compact Portable Consumer Applications
• Freewheeling Diode used with Inductive Loads
Device Package Shipping†
ORDERING INFORMATION
MBR460MFST1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
SCHOTTKY BARRIER
RECTIFIERS
4 AMPERES
60 VOLTS
http://onsemi.com
1,2,3
5,6
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
B460 = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
MARKING
DIAGRAM
B460
AYWZZ
A
A
A
Not Used
C
C
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MBR460MFST3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
NRVB460MFST1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NRVB460MFST3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
MBR460MFS, NRVB460MFS
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
60
V
Average Rectified Forward Current
(Rated V
R
, T
C
= 165°C)
I
F(AV)
4.0 A
Peak Repetitive Forward Current,
(Rated V
R
, Square Wave, 20 kHz, T
C
= 165°C)
I
FRM
8.0 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
40 A
Storage Temperature Range T
stg
−65 to +175 °C
Operating Junction Temperature T
J
−55 to +175 °C
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) E
AS
10 mJ
ESD Rating (Human Body Model) 3B
ESD Rating (Machine Model) M4
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Typ Max Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm
2
1 oz. copper bond pad, on a FR4 board)
R
θ
JC
− 2.4 °C/W
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(i
F
= 4 Amps, T
J
= 125°C)
(i
F
= 4 Amps, T
J
= 25°C)
v
F
0.65
0.71
0.72
0.74
V
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T
J
= 125°C)
(Rated dc Voltage, T
J
= 25°C)
i
R
6.5
0.01
20
0.2
mA
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MBR460MFS, NRVB460MFS
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V) V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
0.80.60.50.40.30.20.10
0.1
1
10
100
0.90.80.50.40.30.20.10
0.1
1
10
100
Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
503020100
1.E+00
Figure 5. Typical Junction Capacitance Figure 6. Current Derating TO−220AB
V
R
, REVERSE VOLTAGE (V) T
C
, CASE TEMPERATURE (°C)
603020100
10
100
1000
1601401201008060
0
1
3
4
5
7
9
10
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)C, JUNCTION CAPACITANCE (pF)
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
0.7 0.9
T
A
= 175°C
T
A
= 150°C
T
A
= 125°C
T
A
= −40°C
T
A
= 25°C
0.6 0.7
T
A
= 175°C
T
A
= 150°C
T
A
= 125°C
T
A
= −40°C
T
A
= 25°C
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
1.E−09
1.E−10
T
A
= 175°C
T
A
= 150°C
T
A
= 125°C
T
A
= −40°C
T
A
= 25°C
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
30 4020 50100
1.E+00
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
1.E−09
T
A
= 175°C
T
A
= 150°C
T
A
= 125°C
T
A
= −40°C
T
A
= 25°C
40 60
T
J
= 25°C
2
6
8
R
q
JC
= 2.4°C/W
Square Wave
DC
60
40 50
P1-P3P4-P5

MBR460MFST1G

Mfr. #:
Buy MBR460MFST1G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 4.0 A 60 V SCHOTTKY DIODE
Lifecycle:
New from this manufacturer.
Delivery:
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