NP180N04TUJ Chapter Title
R07DS0180EJ0100 Rev.1.00 Page 5 of 6
Dec 17, 2010
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
0.0
1.0
2.0
3.0
4.0
-100 -50 0 50 100 150 200
Pulsed
V
GS
= 10 V
I
D
= 90 A
T
ch
- Channel Temperature - °C
C
iss
, C
oss
, C
rss
- Capacitance - pF
100
1000
10000
100000
0.1 1 10 100
V
GS
= 0 V
f = 1 MHz
C
iss
C
rss
C
oss
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
1
10
100
1000
0.1 1 10 100 1000
t
t
d(off)
t
d(on)
t
V
DD
= 20 V
V
GS
= 10 V
R
G
= 0
Ω
I
D
- Drain Current - A
V
DS
- Drain to Source Voltage - V
0
5
10
15
20
25
30
35
40
0 20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
14
16
V
DS
I
D
= 180 A
8 V
20 V
V
DD
= 32 V
V
GS
Q
G
- Gate Charge - nC
V
GS
- Gate to Source Voltage - V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
F
- Diode Forward Current - A
0.1
1
10
100
1000
00.511.5
V
GS
= 10 V
0 V
Pulsed
V
F(S-D)
- Source to Drain Voltage - V
t
rr
- Reverse Recovery Time - ns
10
100
0.1 1 10 100 1000
di/dt = 100 A/
μ
s
V
GS
= 0 V
I
F
- Drain Current - A
