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IXFP8N65X2

P1-P3P4-P5
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFY8N65X2 IXFA8N65X2
IXFP8N65X2
Fig. 8. Transconductance
0
2
4
6
8
10
12
0 2 4 6 8 10121416
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40
o
C
25
o
C
125
o
C
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
5
10
15
20
25
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V
SD
- Volts
I
S
- Amperes
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 10. Gate Charge
0
2
4
6
8
10
024681012
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 325V
I
D
= 4A
I
G
= 10mA
Fig. 7. Input Admittance
0
2
4
6
8
10
12
14
16
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
V
GS
- Volts
I
D
- Amperes
T
J
= 125
o
C
25
o
C
- 40
o
C
Fig. 11. Capacitance
0.1
1
10
100
1000
10000
1 10 100 1000
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Output Capacitance Stored Energy
0
1
2
3
4
5
6
7
8
9
0 100 200 300 400 500 600
V
DS
- Volts
E
OSS
- MicroJoules
© 2018 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_8N65X2(X2-S602) 6-10-16
IXFY8N65X2 IXFA8N65X2
IXFP8N65X2
Fig. 14. Maximum Transient Thermal Impedance
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
Fig. 13. Forward-Bias Safe Operating Area
0.01
0.1
1
10
100
10 100 1,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150
o
C
T
C
= 25
o
C
Single Pulse
25μs
1ms
100μs
R
DS(
on
)
Limit
10ms
DC
TO-220 Outline
1 - Gate
2,4 - Drain
3 - Source
E1
E
A
D1
D
Q
L1
oP
H1
A1
L
A2
D2
e
c
e1
e1
3X b2
e
3X b
EJECTOR
PIN
TO-252 Outline
TO-263 Outline
1 - Gate
2,4 - Drain
3 - Source
1 - Gate
2,4 - Drain
3 - Source
C2
A
H
1
b
D
E
D1
E1
b2
L2
L1
2
3
4
L3
A2
A1
e
c
e
0
0.43 [11.0]
0.66 [16.6]
0.06 [1.6]
0.10 [2.5]
0.20 [5.0]
0.34 [8.7]
0.12 [3.0]
P1-P3P4-P5

IXFP8N65X2

Mfr. #:
Buy IXFP8N65X2
Manufacturer:
Littelfuse
Description:
MOSFET 650V/8A TO-220
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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