RK3055E
Transistors
Rev.B 3/4
0.3
0 5 10 15 20
0.2
0.1
Ta=25°C
Pulsed
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.7
Static Drain-Source On-State Resistance
Fig.9
vs. Gate-Source Voltage
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
ID=5A
2.5A
0
0.1
0.3
0.4
0.5
−25−50 25 500 75 100 125 150
0.2
0.6
Pulsed
V
GS
=
10V
Fig.8
Static Drain-Source On-State Resistance
Fig.9
vs. Channel Temperature
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
CHANNEL TEMPERATURE : Tch
(°C)
I
D
=5A
2.5A
1
10
100
0.1 0.2 0.50.01 0.02 0.05
1 2.0 5.0
10
Pulsed
V
DS
=
15V
Ta
=
−25°C
25°C
75°C
125°C
0.1
0.2
0.5
2
5
20
50
DRAIN CURRENT : I
D
(A)
Fig.9 Forward Transfer Admittance
Fig.9 vs. Drain Current
FORWARD TRANSFER ADMITTANCE : Y
fS
(S)
0.05
0.1
0.2
0.5
1
2
5
10
0 0.5 1.0 1.5
V
GS
=0V
Pulsed
Ta=125°C
75°C
−25°C
25°C
Fig.10 Reverse Drain Current
Fig.14
vs. Source-Drain Voltage ( Ι )
REVERSE DRAIN CURRENT : I
DR
(A)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
5
1
0.5
0 1.0 1.5
0.01
0.05
0.1
0.5
REVERSE DRAIN CURRENT : I
DR
(A)
V
GS
=10V 0V
T
a
=25°C
Pulsed
Fig.11 Reverse Drain Current
Fig.14
vs. Source-Drain Voltage ( ΙΙ )
SOURCE-DRAIN VOLTAGE : V
SD
(V)
10000
1000
2000
5000
100
200
500
10
20
50
0.1 0.2 0.5 1 2 5 10 20 50 100
Ta
=
25
°C
f
=
1MHz
V
GS
=
0V
Pulsed
C
rss
C
oss
C
iss
Fig.12 Typical Capacitance
Fig.14 vs. Drain-Source Voltage
CAPACITANCE : C
(pF)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
2
5
10
20
50
100
200
500
1000
0.10.05 0.2 0.5 1 2 5 10
SWITCHING TIME : t
(ns)
DRAIN CURRENT : I
D
(A)
Fig.13 Switching Characteristics
Ta=25°C
V
DD
=30V
V
GS
=10V
R
G
=10Ω
Pulsed
t
f
t
d(off)
t
r
t
d(on)
(See Figures 16 and 17 for
the measurement circuit
and resultant waveforms)
10
0.2 0.5
500
1000
100
50
12 510
REVERSE RECOVERY TIME : trr
(ns)
REVERSE DRAIN CURRENT : I
DR
(A)
Fig.14 Reverse Recovery Time
Fig.14 vs. Reverse Drain Current
0.1
di/dt=50A/µs
V
GS
=0V
Ta=25°C
Pulsed
