Si9979
Vishay Siliconix
www.vishay.com
2
Document Number: 70012
S-41209—Rev. E, 21-Jun-04
ABSOLUTE MAXIMUM RATINGS
Voltage on Pin 42 50 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Voltage on Pins 1−4, 10, 11 −0.3 V to V
DD
+ 0.3 V. . . . . . . . . . . . . . . . . . . . .
Voltage on Pins 5−9 −0.3 V to 5.5 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Voltage on Pins 26, 28, 30, 32, 34, 36 60 V. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Voltage on Pins 27, 31, 35 −2 to 50 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature
C Suffix 0 to 70_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D Suffix −40 to 85_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature −65 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature (T
J
) 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (P
D
)
C Suffix 0.70 W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D Suffix 0.55 W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RECOMMENDED OPERATING RANGE
V+ +20 to 40 V
DC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
R
T
10 kW Min. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SPECIFICATIONS
Test Conditions
Unless Otherwise Specified
Limits
Parameter Symbol
w
V+ = 20 to 40 V, I
DD
= 0 mA
Min
a
Typ
b
Max
a
Unit
Power
Supply Voltage Range V+ 20 40
Logic Voltage V
DD
−20 mA v I
DD
v 0 mA 14.5 16 17.5
V
Supply Current I+ 4.5
Logic Current I
DD
−20
mA
Internal Reference
d
V
REF
4.2 V
Commutation Inputs (IN
A
, IN
B
, IN
C
, 60/120)
High-State V
IH
4.0
Low-State V
IL
1.0
V
High-State Input Current I
IH
V
IH
= V
DD
10
Low-State Input Current I
IL
V
IL
= 0 V −50
mA
Logic Inputs (F/R, EN, QS, PWM, BRK)
High-State V
IH
2.0
Low-State V
IL
0.8
V
High-State Input Current I
IH
V
IH
= 5.5 V 10
Low-State Input Current I
IL
V
IL
= 0 V −125
mA
Outputs
Low-Side Gate Drive, High State V
GBH
14 16 17.5
Low-Side Gate Drive, Low State V
GBL
0.1
High Side Gate Drive High State
T
A
= 0 to 70_C C Suffix 16 18
High-Side Gate Drive, High State V
GTH
T
A
= −40 to 85_C D Suffix 16 20
V
High-Side Gate Drive, Low State V
GTL
0.1
Capacitor Voltage
d
V
CAP
V+ = 40 V 55
Low-Side Switching, Rise Time t
rL
70
Low-Side Switching, Fall Time t
fL
Risetime = 1 to 10 V
25
High-Side Switching, Rise Time t
rH
Falltime = 10 to 1 V
C
L
= 600 pF
100
High-Side Switching, Fall Time t
fH
40
ns
t
BLH
100
Break-Before-Make Time
t
BHL
300
TACH Output/FAULT Output V
OL
I
OL
= 1.0 mA 0.15 0.4 V
TACH Output Pulsewidth t
T
300 600 ns