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ZXTP2039FTC

P1-P3P4-P5
Issue 3 - August 2005 1 www.zetex.com
© Zetex Semiconductors plc 2005
ZXTP2039F
SOT23 80 volt PNP silicon planar medium power
transistor
Summary
V
(BR)CEV
> -80V
V
(BR)CEO
> -60V
I
c(cont)
= -1A
V
ce(sat)
< -600mV @ -1A
Complementary type
ZXTN2038F
Description
This transistor combines high gain, high current operation and low saturation voltage making it
ideal for power MOSFET gate driving and low loss power switching.
Features
■ Low saturation voltage for reduced power dissipation
■ 1 to 2 amp high current capability
■ Pb-free
■ SOT23 package
Applications
■ Power MOSFET gate driving
■ Low loss power switching
Ordering information
Device marking
P39
Device Reel size Tape width Quantity per reel
ZXTP2039FTA 7” 8mm 3,000
ZXTP2039FTC 13” 8mm 10,000
Pin out - top view
ZXTP2039F
Issue 3 - August 2005 2 www.zetex.com
© Zetex Semiconductors plc 2005
Absolute maximum ratings
Parameter Symbol Limit Unit
Collector-base voltage V
CBO
-80 V
Collector-emitter voltage V
CEV
-80 V
Collector-emitter voltage V
CEO
-60 V
Emitter-base voltage V
EBO
-5.0 V
Peak pulse current I
CM
-2 A
Continuous collector current
*
NOTES:
* For a device surface mounted on a 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
I
C
-1 A
Peak base current I
BM
-1 A
Power dissipation @ T
A
=25°C
*
P
D
350 mW
Operating and storage temperature T
j
:T
stg
-55 to +150 °C
ZXTP2039F
Issue 3 - August 2005 3 www.zetex.com
© Zetex Semiconductors plc 2005
Electrical characteristics (@T
AMB
= 25°C)
Parameter Symbol Min. Max. Unit Conditions
Collector-base breakdown
voltage
V
(BR)CBO
-80 V I
C
=-100␮A
Collector-emitter breakdown
voltage
V
(BR)CEV
-80 V I
C
=-1␮A
-0.3V < V
BE
< 1V
Collector-emitter breakdown
voltage
V
(BR)CEO
-60 V
I
C
=-10mA
*
NOTES:
* Measured under pulsed conditions. Pulse width=300␮S. Duty cycle ⱕ2%
Spice parameter data is available upon request for this device
Emitter-base breakdown
voltage
V
(BR)EBO
-5 V I
E
=-100µA
Collector-emitter cut-off current I
CES
-100 nA V
CE
=-60V
Collector-base cut-off current I
CBO
-100 nA V
CB
=-60V
Emitter-base cut-off current I
EBO
-100 nA V
EB
=-4V
Static forward current transfer
ratio
h
FE
100
100
80
15
300
I
C
=-1mA, V
CE
=-5V
I
C
=-500mA, V
CE
=-5V
*
I
C
=-1A, V
CE
=-5V
*
I
C
=-2A, V
CE
=-5V
*
Collector-emitter saturation
voltage
V
CE(sat)
-0.2
-0.3
-0.6
V
V
V
I
C
=-100mA, I
B
=-2mA
*
I
C
=-500mA, I
B
=-50mA
*
I
C
=-1A, I
B
=-100mA
*
Base-emitter saturation voltage V
BE(sat)
-1.2 V
I
C
=-1A, I
B
=-100mA
*
Base-emitter turn-on voltage V
BE(on)
-1.0 V
I
C
=-1A, V
CE
=-5V
*
Transition frequency f
T
150 I
C
=-50mA, V
CE
=-10V
f=100MHz
Output capacitance C
obo
10 pF V
CB
=-10V, f=1MHz
P1-P3P4-P5

ZXTP2039FTC

Mfr. #:
Buy ZXTP2039FTC
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT PNP 60V 1A 3-PIN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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