1998 Oct 15 3
NXP Semiconductors Product data sheet
Quadruple bidirectional ESD transient
voltage suppressor
BZA408B
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
Note
1. α
ch (p to p)
is measured as follows: a −7 dBs sinewave of 400 Hz is connected to e.g. pin 6 and a −7 dBs sinewave of
1
kHz to pin 1. The 1 kHz signal of pin 1 is measured on pin 6 by means of a spectrum analyser with an input
impedance of 1
MΩ. So α
ch (p to p)
equals the 1 kHz level on pin 1 minus the 1 kHz level on pin 6. For the 400 Hz
signal the same measurement is done in the opposite way.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point one or more diodes loaded 340 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode (pin 2 and / or 5 connected to ground)
V
RWM
working reverse voltage − 5 V
V
R
reverse voltage I
test
= 5 mA 5.5 − V
V
ZSM
non-repetitive peak reverse voltage t
p
= 1 ms; I
ZSM
= 2 A − 10 V
I
R
reverse current V
R
= V
RWM
− 100 nA
C
d
diode capacitance see Fig.3
V
R
= 0; f = 1 MHz − 75 pF
V
R
= 5 V; f = 1 MHz − 55 pF
α
ch (p to p)
pin to pin channel separation note 1; see Fig.4 70 − dB
