BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT
www.vishay.com
Vishay General Semiconductor
Revision: 23-Feb-16
1
Document Number: 88549
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Common Cathode Ultrafast Rectifier
FEATURES
• Power pack
• Glass passivated pellet chip junction
• Ultrafast recovery times
• Soft recovery characteristics
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB
package)
• Solder dip 275 °C max. 10 s, per JESD 22-B106
(for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
power supplies, freewheeling diodes, DC/DC converters
and polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 5.0 A
V
RRM
100 V to 200 V
I
FSM
55 A
t
rr
25 ns
V
F
0.895 V
T
J
max. 150 °C
Package
TO-220AB, ITO-220AB,
TO-263AB
Diode variations Common cathode
BYQ28E, UG10 BYQ28EF, UGF10
BYQ28EB, UGB10
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
PIN 1
PIN 2
K
HEATSINK
1
2
3
PIN 2
PIN 1
PIN 3
ITO-220AB
TO-263AB
1
2
3
1
2
K
Available
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL
UG10BCT UG10CCT UG10DCT
UNIT
BYQ28E-100 BYQ28E-150 BYQ28E-200
Maximum repetitive peak reverse voltage V
RRM
100 150 200 V
Working peak reverse voltage V
RWM
100 150 200 V
Maximum DC blocking voltage V
DC
100 150 200 V
Maximum average forward rectified current at T
C
= 100 °C
total device
I
F(AV)
10
A
per diode 5.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
55 A
Non-repetitive peak reverse current per diode at t
p
= 100 μs I
RSM
0.2 A
Electrostatic discharge capacitor voltage,
human body model: C = 250 pF, R = 1.5 k
V
C
8kV
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V
AC
1500 V
