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CDBUR0230R

P1-P3P4-P4
CDBUR0230R
Page 1
QW-A1068
REV:C
A
mA
V
V
1
200
30
35
IO
VR
VRRM
IFSM
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
150
1.5
-40
PD
CJ
Power dissipation
Typical capacitance between
Average forward current
Reverse voltage
Repetitive peak reverse voltage
Forward current,surge peak
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
uA
V
1
0.6
IR
VF
Reverse current
Forward voltage
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
VR = 10 V
IF = 200 mA
O
Maximum Rating (at TA=25 C unless otherwise noted)
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
0.071(1.80)
0.063(1.60)
0.039(1.00)
0.031(0.80)
0.033(0.85)
0.027(0.70)
Dimensions in inches and (millimeter)
0.028(0.70) Typ.
0.018(0.45) Typ.
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
O
C
O
C
+125
+125
-40
TSTG
TJ
Storage temperature
Junction temperature
terminals
mW
pF
VR = 1 V, f=1.0MHz reverse voltage
0603/SOD-523F
Io = 200 mA
VR = 30 Volts
RoHS Device
Features
-
-Designed for mounting on small surface.
-Extremely thin / leadless package.
-Majority carrier conduction.
Mechanical data
-Case: 0603/SOD-523F standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Marking Code: Cathode band & BB
-Mounting position: Any.
-Weight: 0.003 gram(approx.).
Low reverse current.
RATING AND CHARACTERISTIC CURVES (CDBUR0230R)
Page 2
QW-A1068
REV:C
Capacitance between terminals (PF)
Reverse voltage (V)
Reverse current ( A )
Reverse voltage (V)
1u
1n
10u
100n
0 10 20 25
30
Fig. 2 - Reverse characteristics
0
20
40
60
80
100
0 25 50
75
100 125
O
Ambient temperature ( C)
Average forward current(%)
Fig.4 - Current derating curve
Fig. 3 - Capacitance between
terminals characteristics
1m
0 1510 20
1
10
100
5
25
30
100u
15
5
10n
O
25 C
O
-25 C
O
75 C
O
125 C
f = 1 MHz
Ta = 25
C
Forward current (mA )
0.2 0.40
1
100
0.5
0.1
0.8
Forward voltage (V)
Fig. 1 - Forward characteristics
1000
0.6
0.3
0.1 0.7
10
O
-2
5
C
O
25
C
O
7
5 C
O
1
2
5 C
570
540
580
560
590
550
AVG:5 68mV
O
Ta=25 C
IF=200mA
n=30pcs
Fig. 5 - VF Dispersion map
600
0
800
400
1000
200
100
300
500
700
900
Fig. 6 - IR Dispersion map
30
0
40
20
50
10
5
15
25
35
45
Fig. 7 - CT Dispersion map
O
Ta=25 C
VR=10V
n=30pcs
AVG:111nA
AVG:1 8.8 pF
O
Ta=25 C
F=1MHz
VR=0V
n=10pcs
Forward voltage (mV)
Reverse current (nA)
Capacitance between
terminals(pF)
150
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
Page 3
QW-A1068
REV:C
B
C
d
D D
2
D
1
E F P P
0
P
1
T
SYMBOL
A
W W
1
(mm)
(inch)
0.039 0.004± 0.073 0.004± 0.039 0.004± 0.061 0.002±
7.008 0.04±
2.362 MIN.
0.512 0.008±
SYMBOL
(mm)
(inch)
0.069 0.004± 0.138 0.002±
0.157 0.004± 0.157 0.004±
0.079 0.004± 0.009 0.002± 0.315 0.008±
0.531 MAX.
1.00 0.10±
1.85 0.10±
4.00 0.10±
1.55 0.05±
3.50 0.05±1.75 0.10±
60.0 MIN. 13.0 0.20±1.00 0.10±
4.00 0.10± 2.00 0.05± 0.23 0.05±
8.00 0.20±
13.5 MAX.
178 1±
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
Reel Taping Specification
o
1
2
0
Trailer Device Leader
10 pitches (min)10 pitches (min)
.......
.......
....... ..............
....... ..............
End
Start
D1
D2
D
W1
T
C
Direction of Feed
Index hole
d
E
F
B
W
P
P0
P1
A
Polarity
0603
(SOD-523F)
0603
(SOD-523F)
P1-P3P4-P4

CDBUR0230R

Mfr. #:
Buy CDBUR0230R
Manufacturer:
Comchip Technology
Description:
Schottky Diodes & Rectifiers 200mA 30V Low Leak Sm. Sgnl. Schottky
Lifecycle:
New from this manufacturer.
Delivery:
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