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VS-HFA04TB60-N3

P1-P3P4-P6P7-P8
VS-HFA04TB60PbF, VS-HFA04TB60-N3
www.vishay.com
Vishay Semiconductors
Revision: 22-Jun-15
1
Document Number: 94035
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
HEXFRED
®
Ultrafast Soft Recovery Diode, 4 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
RRM
and Q
rr
• Designed and qualified according to
JEDEC
®
-JESD47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA04TB60... is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 4 A continuous current, the
VS-HFA04TB60... is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
®
product line features
extremely low values of peak recovery current (I
RRM
) and
does not exhibit any tendency to “snap-off” during the
t
b
portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA04TB60... is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
PRODUCT SUMMARY
Package TO-220AC
I
F(AV)
4 A
V
R
600 V
V
F
at I
F
1.4 V
t
rr
typ. 17 ns
T
J
max. 150 °C
Diode variation Single die
TO-220AC
Base
cathode
13
Cathode Anode
4
2
Available
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
R
600 V
Maximum continuous forward current I
F
T
C
= 100 °C 4
ASingle pulse forward current I
FSM
25
Maximum repetitive forward current I
FRM
16
Maximum power dissipation P
D
T
C
= 25 °C 25
W
T
C
= 100 °C 10
Operating junction and storage temperature range T
J
, T
Stg
-55 to +150 °C
VS-HFA04TB60PbF, VS-HFA04TB60-N3
www.vishay.com
Vishay Semiconductors
Revision: 22-Jun-15
2
Document Number: 94035
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100 μA 600 - -
V
Maximum forward voltage V
FM
I
F
= 4.0 A
See fig. 1
-1.51.8
I
F
= 8.0 A - 1.8 2.2
I
F
= 4.0 A, T
J
= 125 °C - 1.4 1.7
Maximum reverse
leakage current
I
RM
V
R
= V
R
rated
See fig. 2
- 0.17 3.0
μA
T
J
= 125 °C, V
R
= 0.8 x V
R
rated - 44 300
Junction capacitance C
T
V
R
= 200 V See fig. 3 - 4.0 8.0 pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time
See fig. 5, 6 and 16
t
rr
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V - 17 -
nst
rr1
T
J
= 25 °C
I
F
= 4 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
-2842
t
rr2
T
J
= 125 °C - 38 57
Peak recovery current
See fig. 7 and 8
I
RRM1
T
J
= 25 °C - 2.9 5.2
A
I
RRM2
T
J
= 125 °C - 3.7 6.7
Reverse recovery charge
See fig. 9 and 10
Q
rr1
T
J
= 25 °C - 40 60
nC
Q
rr2
T
J
= 125 °C - 70 105
Peak rate of fall of recovery
current during t
b
See fig. 11 and 12
dI
(rec)M
/dt1 T
J
= 25 °C - 280 -
A/μs
dI
(rec)M
/dt2 T
J
= 125 °C - 235 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
lead
0.063" from case (1.6 mm) for 10 s - - 300 °C
Thermal resistance,
junction to case
R
thJC
--5.0
K/W
Thermal resistance,
junction to ambient
R
thA
Typical socket mount - - 80
Thermal resistance,
case to heatsink
R
thS
Mounting surface, flat, smooth and greased - 0.5 -
Weight
-2.0- g
-0.07- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device Case style TO-220AC HFA04TB60
VS-HFA04TB60PbF, VS-HFA04TB60-N3
www.vishay.com
Vishay Semiconductors
Revision: 22-Jun-15
3
Document Number: 94035
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
1
10
062
3
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous
Forward Current (A)
100
14
0.1
5
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.01
0.1
1
10
100
0 100 200
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (μA)
0.001
1000
300 500400
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
10
100
1 10 100 1000
1
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Response
10
Single pulse
(thermal resistance)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
P1-P3P4-P6P7-P8

VS-HFA04TB60-N3

Mfr. #:
Buy VS-HFA04TB60-N3
Manufacturer:
Vishay
Description:
Rectifiers 4A 600V Ultrafast 17ns HEXFRED
Lifecycle:
New from this manufacturer.
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