MARCH 1999 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Electrical Characteristics for any Terminal Pair, T
A
= 25 °C (Unless Otherwise Noted)
TISP7xxxH3SL Overvoltage Protector Series
Parameter Test Conditions Min Typ Max Unit
I
DRM
Repetitive peak off-
state current
V
D
= V
DRM
T
A
= 25 °C
T
A
= 85 °C
±5
±10
µA
V
(BO)
Breakover voltage dv/dt = ±750 V/ms, R
SOURCE
= 300 Ω
‘7070
‘7080
‘7095
‘7125
‘7135
‘7145
‘7165
‘7180
‘7200
‘7210
‘7220
‘7250
‘7290
‘7350
‘7400
±70
±80
±95
±125
±135
±145
±165
±180
±200
±210
±220
±250
±290
±350
±400
V
V
(BO)
Impulse breakover
voltage
dv/dt ≤ ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
‘7070
‘7080
‘7095
‘7125
‘7135
‘7145
‘7165
‘7180
‘7200
‘7210
‘7220
‘7250
‘7290
‘7350
‘7400
±78
±88
±103
±134
±144
±154
±174
±189
±210
±220
±231
±261
±302
±362
±414
V
I
(BO)
Breakover current dv/dt = ±750 V/ms, R
SOURCE
= 300 Ω ±0.1 ±0.8 A
V
T
On-state voltage I
T
= ±5A, t
W
= 100 µs ±5V
I
H
Holding current I
T
= ±5A, di/dt=-/+30mA/ms ±0.15 ±0.6 A
dv/dt
Critical rate of rise of
off-state voltage
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
±5kV/µs
I
D
Off-state current V
D
= ±50 V T
A
= 85 °C ±10 µA
