ZXTD2M832TA

SUMMARY
V
CEO
= -20V; R
SAT
= 64m ;I
C
= -3.5A
DESCRIPTION
Packaged in the innovative 3mm x 2mm MLP (Micro Leaded Package)
outline, these new 4
th
generation low saturation dual transistors offer
extremely low on state losses making them ideal for use in DC-DC circuits
and various driving and power management functions.
Additionally users gain several other key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower package height (nom 0.9mm)
Reduced component count
FEATURES
Low Equivalent On Resistance
Extremely Low Saturation Voltage (-220mV @ -1A)
h
FE
characterised up to -6A
I
C
= -3.5A Continuous Collector Current
3mm x 2mm MLP
APPLICATIONS
DC - DC Converters (FET Drivers)
Charging circuits
Power switches
Motor control
LED Backlighting circuits
DEVICE MARKING
D22
ZXTD2M832
ISSUE 2 - JANUARY 2007
1
MPPS™ Miniature Package Power Solutions
DUAL 20V PNP LOW SATURATION SWITCHING TRANSISTOR
DEVICE REEL TAPE
WIDTH
QUANTITY
PER REEL
ZXTD2M832TA 7
ⴕⴕ 8mm 3000
ZXTD2M832TC 13
8mm 10000
ORDERING INFORMATION
B2
C2
E2
B1
C1
E1
3mm x 2mm (Dual die) MLP
3mm x 2mm MLP
underside view
PINOUT
ZXTD2M832
ISSUE 2 - JANUARY 2007
2
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)(f) R
θJA
83.3 °C/W
Junction to Ambient (b)(f) R
θJA
51 °C/W
Junction to Ambient (c)(f) R
θJA
125 °C/W
Junction to Ambient (d)(f) R
θJA
111 °C/W
Junction to Ambient (d)(g) R
θJA
73.5 °C/W
Junction to Ambient (e)(g) R
θJA
41.7 °C/W
THERMAL RESISTANCE
Notes
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed
pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.
PARAMETER SYMBOL LIMIT UNIT
Collector-Base Voltage V
CBO
-25 V
Collector-Emitter Voltage V
CEO
-20 V
Emitter-Base Voltage V
EBO
-7.5 V
Peak Pulse Current I
CM
-6 A
Continuous Collector Current (a)(f) I
C
-3.5 A
Base Current I
B
-1000 mA
Power Dissipation at TA=25°C (a)(f)
Linear Derating Factor
P
D
1.5
12
W
mW/°C
Power Dissipation at TA=25°C (b)(f)
Linear Derating Factor
P
D
2.45
19.6
W
mW/°C
Power Dissipation at TA=25°C (c)(f)
Linear Derating Factor
P
D
1
8
W
mW/°C
Power Dissipation at TA=25°C (d)(f)
Linear Derating Factor
P
D
1.13
9
W
mW/°C
Power Dissipation at TA=25°C (d)(g)
Linear Derating Factor
P
D
1.7
13.6
W
mW/°C
Power Dissipation at TA=25°C (e)(g)
Linear Derating Factor
P
D
3
24
W
mW/°C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ABSOLUTE MAXIMUM RATINGS.
ZXTD2M832
ISSUE 2 - JANUARY 2007
3
0.1 1 10
0.01
0.1
1
10
0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
100µ 1m 10m 100m 1 10 100 1k
0
20
40
60
80
0.1 1 10 100
0
25
50
75
100
125
150
175
200
225
0.1 1 10 100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Note (a)(f)
100us
100ms
1s
V
CE( SAT)
Limited
1ms
Safe Operating Area
Single Pulse, T
amb
=25°C
DC
10ms
I
C
Collector Current (A)
V
CE
Collector-Emitter Voltage (V)
1oz Cu
Note (d)(f)
1oz Cu
Note (d)(g)
2oz Cu
Note (a)(f)
2oz Cu
Note (e)(g)
Derating Curve
T
amb
=25°C
Max Power Dissipation (W)
Temperature (°C)
Note (a)(f)
D=0.2
D=0.5
D=0.1
Transient Thermal Impedance
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
1oz copper
Note (g)
1oz copper
Note (f)
2oz copper
Note (f)
2oz copper
Note (g)
Thermal Resistance v Board Area
Thermal Resistance (°C/W)
BoardCuArea(sqcm)
1oz copper
Note (g)
2oz copper
Note (g)
1oz copper
Note (f)
2oz copper
Note (f)
Power Dissipation v Board Area
T
amb
=25°C
T
jmax
=150°C
Continuous
P
D
Dissipation (W)
BoardCuArea(sqcm)
TYPICAL CHARACTERISTICS

ZXTD2M832TA

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT 20V PNP 3x2 MLP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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