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IXFX32N50

P1-P2
1 - 2
© 2000 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 500 V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 MW 500 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
C
= 25°C32A
I
DM
T
C
= 25°C, pulse width limited by T
JM
120 A
I
AR
T
C
= 25°C32A
E
AS
T
C
= 25°C 1.5 J
E
AR
T
C
= 25°C45mJ
dv/dt I
S
£ I
DM
, di/dt £ 100 A/ms, V
DD
£ V
DSS
, 5 V/ns
T
J
£ 150°C, R
G
= 2 W
P
D
T
C
= 25°C 360 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6 mm (0.062 in.) from case for 10 s 300 °C
Weight 6 g
HiPerFET
TM
Power MOSFET
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
PLUS 247
Features
• Low R
DS (on)
HDMOS
TM
process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Fast intrinsic rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
Advantages
• Easy assembly
• Space savings
• High power density
G = Gate D = Drain
S = Source
98719A (7/00)
IXFX 32N50 V
DSS
= 500 V
I
D25
= 32 A
R
DS(on)
= 0.15 W
t
rr
£ 250 ns
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS
= 0 V, I
D
= 1 mA 500 V
V
DSS
temperature coefficient 0.102 %/K
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA 2 4 V
V
GS(th)
temperature coefficient -0.206 %/K
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0 ±100 nA
I
DSS
V
DS
= 0.8 • V
DSS
T
J
= 25°C 200 mA
V
GS
= 0 V T
J
= 125°C1mA
R
DS(on)
V
GS
= 10 V, I
D
= 15A 0.15 W
Pulse test, t £ 300 ms, duty cycle d £ 2 %
Preliminary data sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 2
© 2000 IXYS All rights reserved
IXFX 32N50
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test 18 28 S
C
iss
4950 5450 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 620 730 pF
C
rss
240 310 pF
t
d(on)
35 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
42 ns
t
d(off)
R
G
= 2 W (External) 110 ns
t
f
26 ns
Q
g(on)
227 300 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
29 40 nC
Q
gd
110 145 nC
R
thJC
0.35 K/W
R
thCK
0.15 K/W
Source-Drain Diode Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
I
S
V
GS
= 0 V 32 A
I
SM
Repetitive; 128 A
pulse width limited by T
JM
V
SD
I
F
= I
S
, V
GS
= 0 V, 1.5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
t
rr
250 ns
Q
RM
0.85 mC
I
RM
8A
I
F
= I
S
-di/dt = 100 A/ms,
V
R
= 100 V
PLUS247
TM
Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
1
2.29 2.54 .090 .100
A
2
1.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b
1
1.91 2.13 .075 .084
b
2
2.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
P1-P2

IXFX32N50

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Description:
MOSFET 32 Amps 500V 0.16 Rds
Lifecycle:
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