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BYG22AHE3_A/H

P1-P3P4-P5
BYG22A, BYG22B, BYG22D
www.vishay.com
Vishay General Semiconductor
Revision: 19-Feb-15
1
Document Number: 88959
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultrafast Avalanche SMD Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Low reverse current
• Low forward voltage
• Soft recovery characteristic
• Ultra fast reverse recovery time
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive, and telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
2.0 A
V
RRM
50 V, 100 V, 200 V
I
FSM
35 A
I
R
1.0 μA
V
F
at I
F
1.1 V
t
rr
25 ns
E
R
20 mJ
T
J
max. 150 °C
Package DO-214AC (SMA)
Diode variations Single die
DO-214AC (SMA)
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL BYG22A BYG22B BYG22D UNIT
Device marking code BYG22A BYG22B BYG22D
Maximum repetitive peak reverse voltage V
RRM
50 100 200 V
Average forward current I
F(AV)
2.0 A
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
I
FSM
35 A
Pulse energy in avalanche mode,
non repetitive (inductive load switch off)
I
(BR)R
= 1 A, T
J
= 25 °C
E
R
20 mJ
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C
BYG22A, BYG22B, BYG22D
www.vishay.com
Vishay General Semiconductor
Revision: 19-Feb-15
2
Document Number: 88959
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Notes
(1)
Mounted on epoxy-glass hard tissue
(2)
Mounted on epoxy-glass hard tissue, 50 mm
2
35 μm Cu
(3)
Mounted on Al-oxide-ceramic (Al
2
O
3
), 50 mm
2
35 μm Cu
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL BYG22A BYG22B BYG22D UNIT
Maximum instantaneous
forward voltage
I
F
= 1.0 A
T
J
= 25 °C V
F
(1)
1.0
V
I
F
= 2.0 A 1.1
Maximum reverse current V
R
= V
RRM
T
J
= 25 °C
I
R
1
µA
T
J
= 100 °C 10
Maximum reverse recovery time I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A t
rr
25 ns
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL BYG22A BYG22B BYG22D UNIT
Maximum thermal resistance, junction to lead, T
L
= const. R
JL
25 °C/W
Maximum thermal resistance, junction to ambient
R
JA
(1)
150
°C/WR
JA
(2)
125
R
JA
(3)
100
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
BYG22A-E3/TR 0.064 TR 1800 7" diameter plastic tape and reel
BYG22A-E3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel
BYG22AHE3/TR
(1)
0.064 TR 1800 7" diameter plastic tape and reel
BYG22AHE3/TR3
(1)
0.064 TR3 7500 13" diameter plastic tape and reel
BYG22A, BYG22B, BYG22D
www.vishay.com
Vishay General Semiconductor
Revision: 19-Feb-15
3
Document Number: 88959
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
Fig. 3 - Reverse Current vs. Junction Temperature
Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Fig. 6 - Max. Reverse Recovery Time vs. Forward Current
0.001
0.01
0.1
1
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Forward Voltage (V)
Forward Current (A)
T
J
= 150 °C
T
J
= 25 °C
0
0.5
1.0
1.5
2.0
2.5
V
R
= V
RRM
Half Sine-Wave
Ambient Temperature (°C)
Average Forward Current (A)
100806040200 120 140 160
R
θJA
≤ 25 K/W
R
θJA
≤ 125 K/W
R
θJA
≤ 150 K/W
1
10
100
25 50 75 100 125 150
Reverse Current (µA)
Junction Temperat
u
re (°C)
V
R
= V
RRM
P
R
- Limit
at 100 % V
R
0
10
20
30
40
50
25 50 75 100 125 150
Reverse Power Dissipation (mW)
Junction Temperature (°C)
V
R
= V
RRM
P
R
- Limit
at 80 % V
R
0
10
20
30
40
50
60
70
0.1 1 10 100
f = 1 MHz
Reverse Voltage (V)
Diode Capacitance (pF)
0
0.2
0.4 0.6 0.8
0
20
40
60
80
140
1.0
100
120
T
A
= 125 °C
I
R
= 0.5 A, i
R
= 0.125 A
Reverse Recovery Time (ns)
Forward Current (A)
T
A
= 100 °C
T
A
= 75 °C
T
A
= 25 °C
T
A
= 50 °C
P1-P3P4-P5

BYG22AHE3_A/H

Mfr. #:
Buy BYG22AHE3_A/H
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 2.0A,50V,25NS, AVAL AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
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