CREAT BY ART
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
V
RRM
35 45 50 60 90 100 150 V
V
RMS
24 31 35 42 63 70 105 V
V
DC
35 45 50 60 90 100 150 V
I
F(AV)
A
I
RRM
A
0.95
0.92
-
-
dV/dt V/μs
R
θJC
R
θJA
T
J
O
C
T
STG
O
C
Document Number: DS_D1308048 Version: J13
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case: TO-220AC
Polarity: As marked
MBR735 thru MBR7150
Taiwan Semiconductor
Schottk
Barrier Rectifier
FEATURES
MBR
735
MBR
745
MBR
750
MBR
760
MBR
790
TO-220AC
MBR
7100
MBR
7150
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Mounting torque: 5 in-lbs maximum
Weight: 1.85 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25℃ unless otherwise noted)
PARAMETER SYMBOL
Maximum DC blocking voltage
Maximum average forward rectified current 7.5
Peak repetitive forward current
(Rated VR, Square Wave, 20KHz)
I
FRM
15
0.72
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
150 A
Peak repetitive reverse surge current (Note 1) 1 0.5
0.65 0.82
0.84
Maximum instantaneous forward voltage (Note 2)
I
F
=7.5 A, T
J
=25℃
I
F
=7.5 A, T
J
=125℃
I
F
=15 A, T
J
=25℃
I
F
=15 A, T
J
=125℃
V
F
--
--
Maximum reverse current @ rated VR T
J
=25 ℃
T
J
=125 ℃
I
R
0.1
V
- 0.75 0.92
0.57
mA
15 10 5
Voltage rate of change (Rated V
R
)
10000
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
Typical thermal resistance
5
15
O
C/W
Operating junction temperature range - 55 to +150
Storage temperature range - 55 to +175
