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BCM847BV,315

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
BCM847BV_BS_DS_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 28 August 2009 6 of 15
NXP Semiconductors
BCM847BV/BS/DS
NPN/NPN matched double transistors
T
amb
=25°CV
CE
=5V
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
Fig 1. Collector current as a function of
collector-emitter voltage; typical values
Fig 2. DC current gain as a function of collector
current; typical values
I
C
/I
B
=20
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
Fig 3. Base-emitter saturation voltage as a function
of collector current; typical values
Fig 4. Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa532
V
CE
(V)
0108462
0.08
0.12
0.04
0.16
0.20
I
C
(A)
0
I
B
(mA) = 4.50
2.70
3.15
4.05
3.60
0.45
0.90
1.35
1.80
2.25
006aaa533
200
400
600
h
FE
0
I
C
(mA)
10
−2
10
3
10
2
10
−1
101
(3)
(1)
(2)
006aaa534
I
C
(mA)
10
−1
10
3
10
2
110
0.5
0.9
1.3
0.3
0.7
1.1
V
BEsat
(V)
0.1
(1)
(2)
(3)
006aaa535
1
10
−1
10
V
CEsat
(V)
10
−2
I
C
(mA)
10
−1
10
3
10
2
110
(1)
(2)
(3)
BCM847BV_BS_DS_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 28 August 2009 7 of 15
NXP Semiconductors
BCM847BV/BS/DS
NPN/NPN matched double transistors
V
CE
=5V; T
amb
=25°CV
CE
=5V; T
amb
=25°C
Fig 5. Base-emitter voltage as a function of collector
current; typical values
Fig 6. Transition frequency as a function of collector
current; typical values
f = 1 MHz; T
amb
=25°C f = 1 MHz; T
amb
=25°C
Fig 7. Collector capacitance as a function of
collector-base voltage; typical values
Fig 8. Emitter capacitance as a function of
emitter-base voltage; typical values
006aaa536
0.6
0.8
1
V
BE
(V)
0.4
I
C
(mA)
10
−1
10
3
10
2
110
006aaa537
I
C
(mA)
110
2
10
10
2
10
3
f
T
(MHz)
10
006aaa538
V
CB
(V)
0108462
2
1
3
5
4
C
c
(pF)
0
006aaa539
V
EB
(V)
0642
9
11
7
13
15
C
e
(pF)
5
BCM847BV_BS_DS_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 28 August 2009 8 of 15
NXP Semiconductors
BCM847BV/BS/DS
NPN/NPN matched double transistors
8. Application information
9. Package outline
Fig 9. Current mirror Fig 10. Differential amplifier
006aaa523
V
CC
l
out
R1
TR2TR1
006aaa525
IN2IN1 TR2TR1
OUT2
V+
V−
OUT1
Fig 11. Package outline SOT666 Fig 12. Package outline SOT363 (SC-88)
Fig 13. Package outline SOT457 (SC-74)
Dimensions in mm
04-11-08
1.7
1.5
1.7
1.5
1.3
1.1
1
0.18
0.08
0.27
0.17
0.5
pin 1 index
123
456
0.6
0.5
0.3
0.1
06-03-16Dimensions in mm
0.25
0.10
0.3
0.2
pin 1
index
1.3
0.65
2.2
2.0
1.35
1.15
2.2
1.8
1.1
0.8
0.45
0.15
132
465
04-11-08Dimensions in mm
3.0
2.5
1.7
1.3
3.1
2.7
pin 1 index
1.9
0.26
0.10
0.40
0.25
0.95
1.1
0.9
0.6
0.2
132
4
56
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

BCM847BV,315

Mfr. #:
Buy BCM847BV,315
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT Trans GP BJT NPN 45V 0.1A 6-Pin
Lifecycle:
New from this manufacturer.
Delivery:
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