2SB1184TLQ

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c
2010 ROHM Co., Ltd. All rights reserved.
2010.02 - Rev.C
Power Transistor (-60V, -3A)
2SB1184 / 2SB1243
Features Dimensions (Unit : mm)
1) Low V
CE(sat).
V
CE(sat) = -0.5V (Typ.)
(I
C/IB = -2A / -0.2A)
2) Complements the 2SD1760 / 2SD1864.
Structure
Epitaxial planar type
PNP silicon transistor
Absolute maximum ratings (Ta=25C)
Parameter
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
60 V
V
V
A (DC)
°C
°C
50
5
3
1
15
1
2SB1184
2SB1243
W
W (T
C
=25°C)
W
1
150
55 to 150
Symbol Limits Unit
1 Printed circuit board, 1.7mm thick, collector copper plating 100mm
2
or larger.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Electrical characteristics (Ta=25C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Measured using pulse current.
Parameter Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
60
50
5
120
70
50
1
1
390
1
V
I
C
= −50μA
I
C
= −1mA
I
E
= −50μA
V
CB
= −40V
V
EB
= −4V
V
CE
= −3V, I
C
= −0.5A
I
C
/I
B
= −2A/ 0.2A
V
CE
= −5V, I
E
=0.5A, f=30MHz
V
CB
= −10V, I
E
=0A, f=1MHz
V
V
μA
μA
V
MHz
pF
Typ. Max. Unit Conditions
2SB1184 2SB1243
(1) Base
(2) Collector
(3) Emitter
ROHM : CPT3
EIAJ : SC-63
(1) Emitter
(2) Collector
(3) Base
ROHM :
ATV
0.1
+0.2
0.1
+0.2
+0.3
0.1
2.3±0.22.3±0.2
0.65±0.1
0.9
0.75
1.0±0.2
0.55±0.1
9.5±0.5
5.5
1.5±0.3
2.5
1.5
2.3
0.5±0.1
6.5±0.2
5.1
C0.5
(3)
(2)
(1)
0.9
1.0
6.8
±
0.2
2.5
±
0.2
1.05
0.45
±
0.1
2.54
2.54
0.5
±
0.1
0.9
4.4
±
0.2
14.5
±
0.5
(1)
(2)
(3)
0.65Max.
2/3
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c
2010 ROHM Co., Ltd. All rights reserved.
2010.02 - Rev.C
Data Sheet 2SB1184 / 2SB1243
Packaging specifications and h
FE
Package
Code
Basic ordering unit (pieces)
TL TV2
2500 2500
Taping
QR
h
FE
QR
2SB1184
2SB1243
Type
hFE values are classified as follows :
Item
h
FE
Q
120 to 270
R
180 to 390
Electrical characteristic curves
BASE TO EMITTER VOLTAGE : VBE
(V
)
COLLECTOR CURRENT : IC
(A)
0 0.2 1.40.4 0.8 1.2 1.61
.8
1.00.6
0.01
0.05
0.1
0.02
0.5
1
0.2
5
10
2
VCE= −3V
Ta=100°C
25°C
-25°C
Fig.1 Grounded emitter
propagation characteristic
s
10 2 3 4 5
0
0.5
1.0
1.5
2.0
2.5
3.0
I
B
=0mA
5mA
10mA
15mA
20mA
Tc=25°C
COLLECTOR CURRENT : I
C
(A)
50mA
45mA
40mA
35mA
30mA
25mA
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V
)
Fig.2 Grounded emitter output
characteristics ( )
Fig.3 Grounded emitter output
characteristics ( )
100 20 30 40 50
0
0.5
1.0
2.0
1.5
2.5
3.0
I
B
=0mA
I
B
=−5mA
10mA
25mA
30mA
35mA
40mA
45mA
50mA
20mA
15mA
P
C
=15W
COLLECTOR CURRENT : I
C
(A)
Tc=25°C
COLLECTOR TO EMITTER VOLTAGE : V
CE
(
V)
0.01 0.05 0.10.02 0.5 10.2 5 1
0
2
1
5
10
2
50
100
20
500
1000
200
Ta=25°C
V
CE
=5V
3V
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(A)
Fig.4 DC current gain vs.
collector current ( )
0.010.02 0.10.05 0.2 10.5 2 1
0
5
1
5
10
2
50
100
20
500
1k
200
V
CE
= −3V
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(A)
Ta=100°C
25°C
25°C
Fig.5 DC current gain vs.
collector current ( )
0.010.02 0.10.05 0.2 10.5 2 1
0
5
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(A)
Ta=25°C
I
C
/I
B
=50/1
20/1
10/1
Fig.6 Collector-emitter saturation
voltage vs.collector current
COLLECTOR CURRENT : I
C
(A)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
BASE SATURATION VOLTAGE : V
BE(sat)
(V)
0.01 0.02 0.10.05
0.2 10.5 2 105
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
l
C
/l
B
=10
Ta= −25°C
25°C
100°C
Ta=100°C
25°C
25°C
V
BE(sat)
V
CE(sat)
Fig.7 Collector-emitter saturation voltage
vs. collector current
Base-emitter saturation voltage vs.
collector current
12 105
20 10050 200 100
0
500
1
2
5
10
20
50
100
200
500
1000
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
Ta=25°C
V
CE
= −5V
Fig.8 Gain bandwidth product vs.
emitter current
COLLECTOR OUTPUT CAPACITANCE : Cob
(pF
COLLECTOR TO BASE VOLTAGE : V
CB
(V
0.20.1 0.5 10521 5020 10
1
20
10
5
2
50
200
100
500
Ta=25
°C
f=1MHz
I
E=0A
Fig.9 Collector output capacitance vs.
collector base voltage
3/3
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c
2010 ROHM Co., Ltd. All rights reserved.
2010.02 - Rev.C
Data Sheet 2SB1184 / 2SB1243
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(
V)
Fig.10
Safe operation area
(2SB1184)
-10.0
50
D
C
DC
Fig.11 Safe operation area
(2SB1243)
0.1
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V
)
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10.0
0.2 0.5 1 2 5 10 20 5010
0
Ta=25°C
Single
nonrepetitive
pulse
I
C Max
. (Pulse)
P
w
=10ms
100ms
DC

2SB1184TLQ

Mfr. #:
Manufacturer:
Description:
Bipolar Transistors - BJT D-PAK;BCE PNP;DRIVER SMT HFE RANK Q
Lifecycle:
New from this manufacturer.
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