NTTFS4C13NTAG

NTTFS4C13N
http://onsemi.com
4
TYPICAL CHARACTERISTICS
10
100
1000
10000
5 1015202530
0.006
0.008
0.010
0.012
0.014
0.016
0.018
0.020
0.022
10 20 30 40 50 60 70
0
10
20
30
40
50
60
70
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
0
10
20
30
40
50
60
70
012345
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. V
GS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V) I
D
, DRAIN CURRENT (A)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
I
DSS
, LEAKAGE (nA)
3.8 V
3.2 V
3.0 V
2.8 V
T
J
= 25°C
V
DS
= 5 V
T
J
= 25°C
T
J
= 125°C
T
J
= −55°C
I
D
= 30 A
V
GS
= 4.5 V
T
J
= 25°C
V
GS
= 10 V
I
D
= 30 A
V
GS
= 10 V
V
GS
= 0 V
T
J
= 85°C
T
J
= 150°C
T
J
= 125°C
3.6 V
3.4 V
4 V
4.2 V
4.5 V
6.5 V
10 V
0.006
0.007
0.008
0.009
0.010
0.011
0.012
0.013
0.014
0.015
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
−50 25 0 25 50 75 100 125 150
NTTFS4C13N
http://onsemi.com
5
TYPICAL CHARACTERISTICS
0
5
10
15
20
25
30
0.4 0.5 0.6 0.7 0.8 0.9 1.0
1
10
100
1000
1 10 100
0
1
2
3
4
5
6
7
8
9
10
11
0246810121416
0
100
200
300
400
500
600
700
800
900
1000
0 5 10 15 20 25 30
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) Q
g
, TOTAL GATE CHARGE (nC)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
R
G
, GATE RESISTANCE (W)
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) T
J
, STARTING JUNCTION TEMPERATURE (°C)
C, CAPACITANCE (pF)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
I
S
, SOURCE CURRENT (A)
I
D
, DRAIN CURRENT (A)
E
AS
, SINGLE PULSE DRAIN−TO
SOURCE AVALANCHE ENERGY (mJ)
V
GS
= 0 V
T
J
= 25°C
C
iss
C
oss
C
rss
V
DD
= 15 V
I
D
= 15 A
V
GS
= 10 V
t
d(off)
t
d(on)
t
r
t
f
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V
0 V < V
GS
< 10 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
100 ms
10 ms
1 ms
dc
I
D
= 15 A
10 ms
Q
gs
T
J
= 25°C
V
DD
= 15 V
V
GS
= 10 V
I
D
= 30 A
Q
T
Q
gd
0.01
0.1
1
10
100
0.01 0.1 1 10 100
0
2
4
6
8
10
12
25 50 75 100 125 150
NTTFS4C13N
http://onsemi.com
6
TYPICAL CHARACTERISTICS
0
5
10
15
20
25
30
35
40
45
50
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
0.01
0.1
1
10
100
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 13. Thermal Response
PULSE TIME (sec)
R(t) (°C/W)
10%
Duty Cycle = 50%
20%
5%
2%
1%
Single Pulse
Figure 14. G
FS
vs. I
D
I
D
(A)
G
FS
(S)
Figure 15. Avalanche Characteristics
PULSE WIDTH (SECONDS)
I
D
, DRAIN CURRENT (A)
1
10
100
T
A
= 25°C
T
A
= 85°C
1.0E−08 1.E−031.0E−07 1.0E−06 1.0E−05 1.0E−04

NTTFS4C13NTAG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET Pwr MOSFET 30V 38A 9.4mOhm SGL N-CH
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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