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STW13NK100Z

P1-P3P4-P6P7-P9P10-P12P13-P14
Electrical ratings STW13NK100Z
4/14
1.1 Protection features of gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Table 4. Gate-source zener diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
BV
GSO
Gate-source breakdown voltage Igs=± 1mA (Open Drain) 30 V
STW13NK100Z Electrical characteristics
5/14
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 1mA, V
GS
= 0 1000 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= Max rating,
V
DS
= Max rating,
Tc = 125°C
1
10
µA
µA
I
GSS
Gate body leakage current
(V
GS
= 0)
V
GS
= ± 20V ±10 µA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 150 µA 3 3.75 4.5 V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 6.5 A 0.56 0.70 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance V
DS
=15V, I
D
= 6.5 A 14 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
=25V, f=1 MHz, V
GS
=0
6000
455
100
pF
pF
pF
C
osseq
(2)
.
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
Equivalent output
capacitance
V
GS
=0, V
DS
=0V to 800V 227 pF
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
V
DD
=500 V, I
D
= 7A,
R
G
=4.7Ω, V
GS
=10V
(see Figure 16)
45
35
145
45
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
=800V, I
D
= 13A
V
GS
=10V
190
30
100
266 nC
nC
nC
Electrical characteristics STW13NK100Z
6/14
Table 7. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
I
SD
Source-drain current 13 A
I
SDM
(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) 52 A
V
SD
(2)
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage I
SD
=8.3A, V
GS
=0 1.6 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=13 A,
di/dt = 100A/µs,
V
DD
=100 V, Tj=25°C
(see Figure 18)
820
12.7
31
ns
µC
A
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=13 A,
di/dt = 100A/µs,
V
DD
=100V, Tj=150°C
(see Figure 18)
1050
17.8
34
ns
µC
A
P1-P3P4-P6P7-P9P10-P12P13-P14

STW13NK100Z

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Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 1000 Volt 13A Zener SuperMESH
Lifecycle:
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