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BD139G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 17
1 Publication Order Number:
BD135/D
BD135G, BD137G, BD139G
Plastic Medium-Power
Silicon NPN Transistors
This series of plastic, medium−power silicon NPN transistors are
designed for use as audio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
Features
• High DC Current Gain
• BD 135, 137, 139 are complementary with BD 136, 138, 140
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
BD135G
BD137G
BD139G
V
CEO
45
60
80
Vdc
Collector−Base Voltage
BD135G
BD137G
BD139G
V
CBO
45
60
100
Vdc
Emitter−Base Voltage V
EBO
5.0 Vdc
Collector Current I
C
1.5 Adc
Base Current I
B
0.5 Adc
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
P
D
1.25
10
Watts
mW/°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
12.5
100
Watts
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
10 °C/W
Thermal Resistance, Junction−to−Ambient
R
q
JA
100 °C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
Device
Package Shipping
1.5 A POWER TRANSISTORS
NPN SILICON
45, 60, 80 V, 12.5 W
Y = Year
WW = Work Week
BD1xx = Device Code
xx = 35, 37, 39
G = Pb−Free Package
BD139G TO−225
(Pb−Free)
500 Units / Box
MARKING DIAGRAM
BD135TG TO−225
(Pb−Free)
50 Units / Rail
BD135G TO−225
(Pb−Free)
500 Units / Box
BD137G TO−225
(Pb−Free)
500 Units / Box
ORDERING INFORMATION
3
BASE
1
EMITTER
COLLECTOR
2, 4
TO−225
CASE 77−09
STYLE 1
1
2
3
YWW
BD1xxG
BD135G, BD137G, BD139G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol Min Max UnIt
Collector−Emitter Sustaining Voltage*
(I
C
= 0.03 Adc, I
B
= 0)
BD135G
BD137G
BD139G
BV
CEO
*
45
60
80
−
−
−
Vdc
Collector Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
(V
CB
= 30 Vdc, I
E
= 0, T
C
= 125_C)
I
CBO
−
−
0.1
10
mAdc
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
I
EBO
− 10
mAdc
DC Current Gain
(I
C
= 0.005 A, V
CE
= 2 V)
(I
C
= 0.15 A, V
CE
= 2 V)
(I
C
= 0.5 A V
CE
= 2 V)
h
FE
*
25
40
25
−
250
−
−
Collector−Emitter Saturation Voltage*
(I
C
= 0.5 Adc, I
B
= 0.05 Adc)
V
CE(sat)
*
− 0.5
Vdc
Base−Emitter On Voltage*
(I
C
= 0.5 Adc, V
CE
= 2.0 Vdc)
V
BE(on)
*
− 1
Vdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
TYPICAL CHARACTERISTICS
Figure 1. DC Current Gain Figure 2. Collector−Emitter Saturation Voltage
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
1010.10.010.001
10
100
1000
1010.10.010.001
0
0.1
0.2
0.3
h
FE
, DC CURRENT GAIN
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
CE
= 2 V
150°C
−55°C
25°C
I
C
/I
B
= 10
150°C
−55°C
25°C
BD135G, BD137G, BD139G
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 3. Base−Emitter Saturation Voltage Figure 4. Base−Emitter On Voltage
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
1010.10.010.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1010.10.010.001
0
0.2
0.4
0.6
0.8
1.0
1.2
Figure 5. Capacitance Figure 6. Active−Region Safe Operating Area
V
R
, REVERSE VOLTAGE (V) V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
1001010.1
1
10
100
1000
80101
0.01
0.1
1
10
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
V
BE(on)
, BASE−EMITTER ON VOLTAGE (V)
C, CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (A)
I
C
/I
B
= 10
150°C
−55°C
25°C
V
CE
= 2 V
150°C
−55°C
25°C
f = 1 MHz
C
ib
C
ob
BD135
BD137
BD139
T
J
= 125°C
dc
5 ms
0.5 ms
0.1 ms
Figure 7. Power Derating
T
A
, AMBIENT TEMPERATURE (°C)
160100200
0
0.50
1.00
1.50
P
D
, POWER DISSIPATION (W)
0.25
0.75
1.25
40 60 80 120 140
P1-P3P4-P4

BD139G

Mfr. #:
Buy BD139G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 1.5A 80V 12.5W NPN
Lifecycle:
New from this manufacturer.
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