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BZT585B6V8T-7

P1-P3P4-P4
BZT585B2V4T - BZT585B43T
Document number: DS36638 Rev. 5 - 2
1 of 4
www.diodes.com
March 2014
© Diodes Incorporated
BZT585B2V4T - BZT585B43T
SURFACE MOUNT PRECISION ZENER DIODE
Features
• ±2.0% Tolerance on Breakdown Voltage
• Small, Low Profile Surface Mount Package
• Flat Lead Package Design for Low Profile and High Power
Dissipation
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOD523
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: Cathode Band
• Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.001 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
(Type Number)-7* (Note 4) SOD523 3000/Tape & Reel
*Add “-7” to the appropriate type number in Electrical Characteristics Table, example: 6.2V Zener = BZT585B6V2T-7.
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Top View
e3
xx = Product Type Marking Code
(See Electrical Characteristics Table)
xx
BZT585B2V4T - BZT585B43T
Document number: DS36638 Rev. 5 - 2
2 of 4
www.diodes.com
March 2014
© Diodes Incorporated
BZT585B2V4T - BZT585B43T
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol
V
alue Unit
Forward Voltage @ I
F
= 10mA
@ I
F
= 100mA
V
F
0.9
1.1
V
Continuous Forward Current
I
F
200 mA
Thermal Characteristics
Characteristic Symbol
V
alue Unit
Power Dissipation (Note 5)
P
D
350 mW
Thermal Resistance, Junction to Ambient Air (Note 5)
R
θJA
357 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-65 to +150 °C
Note: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, as shown in Diodes Incorporated’s Suggested Pad Layout document, which can
be found on our website at http://www.diodes.com.
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Type
Number
Marking
Codes
Zener Voltage Range
(Note 6)
Maximum Zener
Impedance (Note 7)
Temperature
Coefficient
Total Capacitance
Maximum
Reverse
Current
(Note 6)
V
Z
@ I
ZT
I
ZT
Z
ZT
@
I
ZT
Z
ZK
@
I
Z
K
I
ZK
TC @ I
ZT
C
T
@ f = 1MHz,
V
R
= 0V
I
R
@ V
R
Nom (V) Min (V) Max (V) mA
Ω
mA
Typical
(mV/°C)
Max
(pF)
µA V
BZT585B2V4T 3C 2.4 2.35 2.45 5 100 400 1 -1.3 450 50 1
BZT585B2V7T 3E 2.7 2.65 2.75 5 100 450 1 -1.4 440 20 1
BZT585B3V3T 3H 3.3 3.23 3.37 5 95 500 1 -1.8 410 5 1
BZT585B3V6T 3J 3.6 3.53 3.67 5 90 500 1 -1.9 390 5 1
BZT585B3V9T 3K 3.9 3.82 3.98 5 90 500 1 -1.9 370 3 1
BZT585B4V3T 3L 4.3 4.21 4.39 5 90 600 1 -1.7 350 3 1
BZT585B4V7T 3M 4.7 4.61 4.79 5 80 500 1 -1.2 325 3 2
BZT585B5V1T 3N 5.1 5.00 5.20 5 60 480 1 -0.5 300 2 2
BZT585B5V6T 3P 5.6 5.49 5.71 5 40 400 1 1.0 275 1 2
BZT585B6V2T 3S 6.2 6.08 6.32 5 10 150 1 2.2 250 3 4
BZT585B6V8T 3T 6.8 6.66 6.94 5 15 80 1 3.0 215 2 4
BZT585B7V5T 3U 7.5 7.35 7.65 5 10 80 1 3.8 170 1 5
BZT585B8V2T 3V 8.2 8.04 8.36 5 10 80 1 4.7 150 0.7 5
BZT585B9V1T 3X 9.1 8.92 9.28 5 10 100 1 5.8 120 0.5 6
BZT585B10T 3Y 10 9.80 10.20 5 10 150 1 7.0 110 0.2 7
BZT585B11T 3Z 11 10.78 11.22 5 10 150 1 8.2 110 0.1 8
BZT585B12T 4A 12 11.76 12.24 5 10 150 1 9.5 105 0.1 8
BZT585B13T 4B 13 12.74 13.26 5 10 170 1 10.7 105 0.1 8
BZT585B15T 4D 15 14.70 15.30 5 15 200 1 13.2 100 0.05 10.5
BZT585B16T 4E 16 15.68 16.32 5 40 200 1 14.4 90 0.05 11.2
BZT585B18T 4F 18 17.64 18.36 5 45 225 1 16.9 80 0.05 12.6
BZT585B20T 4G 20 19.60 20.40 5 55 225 1 19.4 70 0.05 14.0
BZT585B22T 4H 22 21.56 22.44 5 55 250 1 21.9 60 0.05 15.4
BZT585B24T 4J 24 23.52 24.48 5 70 250 1 24.4 55 0.05 16.8
BZT585B27T 4K 27 26.46 27.54 2 80 300 0.5 25.4 50 0.05 18.9
BZT585B30T 4M 30 29.40 30.60 2 80 300 0.5 31.1 50 0.05 21.0
BZT585B33T 4N 33 32.34 33.66 2 80 325 0.5 36.7 45 0.05 23.1
BZT585B36T 4P 36 35.28 36.72 2 90 350 0.5 42.4 45 0.05 25.2
BZT585B39T 4R 39 38.22 39.78 2 130 350 0.5 48.1 45 0.05 27.3
BZT585B43T 4S 43 42.14 43.86 2 150 375 0.5 55.7 40 0.05 30.1
Notes: 6. Short duration pulse test used to minimize self-heating effect.
7. f = 1kHz.
BZT585B2V4T - BZT585B43T
Document number: DS36638 Rev. 5 - 2
3 of 4
www.diodes.com
March 2014
© Diodes Incorporated
BZT585B2V4T - BZT585B43T
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
25
0
50 75 100 125 150
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (W)
D
Note 5
0
0.1
0.2
0.3
0.4
T , AMBIENT TEMPERATURE ( C)
Figure 1 Power Derating Curve
A
°
0.1
1
10
100
1000
200 400 600 800 1000 1200 1400 1600
V , INSTANTANEOUS FORWARD VOLTAGE(mV)
Figure 2 Typical Forward Characteristics
F
I , INS
T
AN
T
ANE
O
U
S F
O
R
WA
R
D
F
C
U
R
R
EN
T
(mA)
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
0
10
20
30
40
50
0123456
7
8910
I, ZE
N
E
R
C
U
R
R
E
N
T
(mA)
Z
V , ZENER VOLTAGE (V)
Figure 3 Typical Zener Breakdown Characteristics
Z
T = 25°C
J
2V7
6V2
2V4
11 12
10
0
10
20
30
I, ZENE
R
C
U
R
R
EN
T
(mA)
Z
V , ZENER VOLTAGE (V)
Figure 4 Typical Zener Breakdown Characteristics
Z
10 20 30 40 50
20
39
43
30
33
36
22
24
27
15
T = 25°C
J
SOD523
Dim Min Max
A 0.25 0.35
B 0.70 0.90
C 1.50 1.70
H 1.10 1.30
K 0.55 0.65
L 0.10 0.30
M 0.10 0.12
All Dimensions in mm
H
C
A
B
K
M
L
P1-P3P4-P4

BZT585B6V8T-7

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