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PDTB113ZK,115

P1-P3P4-P6P7-P9P10-P10
PDTB113Z_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 16 November 2009 4 of 10
NXP Semiconductors
PDTB113Z series
PNP 500 mA resistor-equipped transistors; R1 = 1 kΩ, R2 = 10 kΩ
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
SOT346 - - 500 K/W
SOT54 - - 250 K/W
SOT23 - - 500 K/W
Table 8. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= −40 V; I
E
=0A - - −100 nA
V
CB
= −50 V; I
E
=0A - - −100 nA
I
CEO
collector-emitter
cut-off current
V
CE
= −50 V; I
B
=0A - - −0.5 μA
I
EBO
emitter-base cut-off
current
V
EB
= −5V; I
C
=0A - - −0.8 mA
h
FE
DC current gain V
CE
= −5V; I
C
= −50 mA 70 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= −50 mA; I
B
= −2.5 mA - - −0.3 mV
V
I(off)
off-state input
voltage
V
CE
= −5V; I
C
= −100 μA −0.3 −0.6 −1.0 V
V
I(on)
on-state input
voltage
V
CE
= −0.3 V;
I
C
= −20 mA
−0.4 −0.8 −1.4 V
R1 bias resistor 1 (input) 0.7 1.0 1.3 kΩ
R2/R1 bias resistor ratio 9 10 11
C
c
collector capacitance V
CB
= −10 V; I
E
=i
e
=0A;
f=100MHz
-11-pF
PDTB113Z_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 16 November 2009 5 of 10
NXP Semiconductors
PDTB113Z series
PNP 500 mA resistor-equipped transistors; R1 = 1 kΩ, R2 = 10 kΩ
V
CE
= −5 V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −40 °C
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
V
CE
= −0.3 V
(1) T
amb
= −40 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
V
CE
= −5 V
(1) T
amb
= −40 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig 3. On-state input voltage as a function of
collector current; typical values
Fig 4. Off-state input voltage as a function of
collector current; typical values
006aaa349
10
10
2
10
3
h
FE
1
I
C
(mA)
−10
−1
−10
3
−10
2
−1 −10
(1)
(2)
(3)
006aaa350
I
C
(mA)
−1 −10
3
−10
2
−10
−10
−1
V
CEsat
(V)
−10
−2
(3)
(2)
(1)
006aaa351
I
C
(mA)
−10
−1
−10
3
−10
2
−1 −10
−1
−10
V
I(on)
(V)
−10
−1
(1)
(2)
(3)
I
C
(mA)
−10
−1
−10−1
006aaa352
−1
−10
V
I(off)
(V)
−10
−1
(1)
(2)
(3)
PDTB113Z_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 16 November 2009 6 of 10
NXP Semiconductors
PDTB113Z series
PNP 500 mA resistor-equipped transistors; R1 = 1 kΩ, R2 = 10 kΩ
8. Package outline
Fig 5. Package outline SOT346 (SC-59A/TO-236) Fig 6. Package outline SOT54 (SC-43A/TO-92)
Fig 7. Package outline SOT54A Fig 8. Package outline SOT54 variant
Fig 9. Package outline SOT23 (TO-236AB)
04-11-11Dimensions in mm
3.0
2.5
1.7
1.3
0.26
0.10
12
3
1.9
0.50
0.35
1.3
1.0
3.1
2.7
0.6
0.2
04-11-16Dimensions in mm
5.2
5.0
14.5
12.7
4.8
4.4
4.2
3.6
0.45
0.38
0.48
0.40
1.27
2.54
3
2
1
04-06-28Dimensions in mm
5.2
5.0
14.5
12.7
4.8
4.4
4.2
3.6
0.45
0.38
0.48
0.40
2.54
5.08
3 max
3
2
1
05-01-10Dimensions in mm
5.2
5.0
14.5
12.7
4.8
4.4
4.2
3.6
0.45
0.38
0.48
0.40
1.27
1.27
2.54
2.5
max
3
2
1
04-11-04Dimensions in mm
0.45
0.15
1.9
1.1
0.9
3.0
2.8
2.5
2.1
1.4
1.2
0.48
0.38
0.15
0.09
12
3
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PDTB113ZK,115

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Manufacturer:
NXP Semiconductors
Description:
TRANS PREBIAS PNP 250MW SMT3
Lifecycle:
New from this manufacturer.
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