2
Table 1. Absolute Maximum Rating
[1]
Tc = +25°C
Symbol Parameter Units
Absolute Max.
for PIN Diode
Absolute Max.
for Schottky DIode
I
F
Forward Current (1µs Pulse)
Amp 1 1
P
IV
Peak Inverse Voltage V 50 15
T
J
Junction Temperature °C 150
T
STG
Storage Temperature °C -65 to 150
θ
JC
Thermal Resistance
[2]
°C/W 500
Notes:
1. Operation in excess of anyone of these conditions may result in permanent damage to the device.
2. T
C
= 25°C, T
C
where is defined to be the temperature at the package pins where contacts is made to the circuit board.
Table 2. Electrical Specifications, Tc = +25°C, PIN diode
Symbol Parameter and Test Condition Units Min. Typ Max.
V
BR
Breakdown Voltage, I
R
≤ 10µA
V 50 60 –
V
F
Forward Voltage, I
F
= 100mA V – 0.93 –
R
S
Typical Series Resistance, Freq = 100MHz & I
F
= 1mA Ohm – 1.2 –
R
S
Typical Series Resistance, Freq = 100MHz & I
F
= 10mA Ohm – 0.5 0.6
C
T
Typical Total Capacitance, Freq = 1MHz & V
R
= 0V pF – 0.9 –
C
T
Typical Total Capacitance, Freq = 1MHz & V
R
= 20V pF – 0.53 0.8
τ
Carrier Lifetime @ I
F
=10mA & I
R
=6mA ns – 70 –
Table 3. Electrical Specifications, Tc = +25°C, Schottky diode
Symbol Parameter and Test Condition Units Min. Typ Max.
V
BR
Breakdown Voltage, I
R
≤ 100µA
V 15 22 –
I
R
Reverse Leakage Current @ V
BR
= 1V nA – 40 100
V
F
Forward Voltage, I
F
= 1mA V – 0.32 0.34
V
F
Forward Voltage, I
F
= 10mA V – 0.45 0.50
C
T
Typical Total Capacitance, Freq = 1MHz & V
R
= 0V pF – 0.7 1.0
R
D
Typical Dynamic Resistance, I
F
=5mA Ohm – 12 –
