TSM5NC50CZ C0G Datasheet TSM5NC50CZ C0G | P1-P3

TSM5NC50CZ

Taiwan Semiconductor

1 Version: A1705

N-Channel Power MOSFET

500V, 5A, 1.38Ω

FEATURES

● 100% UIS and R

g

tested

● Advanced planar process

● Compliant to RoHS Directive 2011/65/EU and in

accordance to WEEE 2002/96/EC

● Halogen-free according to IEC 61249-2-21

APPLICATIONS

● Power Supply

● Ballast

● UPS

● HV BLDC

KEY PERFORMANCE PARAMETERS

PARAMETER

VALUE

UNIT

V

DS

500

V

R

DS(on)

(max)

1.38

Ω

Q

g

15

nC

TO-220

ABSOLUTE MAXIMUM RATINGS (T

A

= 25°C unless otherwise noted)

PARAMETER

SYMBOL

Limit

UNIT

Drain-Source Voltage

V

DS

500

V

Gate-Source Voltage

V

GS

±30

V

Continuous Drain Current

(Note 1)

T

C

= 25°C

I

D

5

A

T

C

= 100°C

3.2

Pulsed Drain Current

(Note 2)

I

DM

20

A

Total Power Dissipation @ T

C

= 25°C

P

DTOT

89

W

Single Pulse Avalanche Energy

(Note 3)

E

AS

122.5

mJ

Single Pulse Avalanche Current

(Note 3)

I

AS

3.5

A

Operating Junction and Storage Temperature Range

T

J

, T

STG

- 55 to +150

°C

THERMAL PERFORMANCE

PARAMETER

SYMBOL

Limit

UNIT

Junction to Case Thermal Resistance

R

ӨJC

1.4

°C/W

Junction to Ambient Thermal Resistance

R

ӨJA

62

°C/W

Thermal Performance Note: R

ӨJA

is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-

thermal reference is defined at the solder mounting surface of the drain pins. R

ӨJA

is guaranteed by design while R

ӨCA

is

determined by the user’s board design. R

ӨJA

shown below for single device operation on FR-4 PCB in still air.

TSM5NC50CZ

Taiwan Semiconductor

2 Version: A1705

ELECTRICAL SPECIFICATIONS (T

A

= 25°C unless otherwise noted)

PARAMETER

CONDITIONS

SYMBOL

MIN

TYP

MAX

UNIT

Static

Drain-Source Breakdown Voltage

V

GS

= 0V, I

D

= 250µA

BV

DSS

500

--

V

Gate Threshold Voltage

V

DS

= V

GS

, I

D

= 250µA

V

GS(TH)

2.5

3.3

4.5

V

Gate Body Leakage

V

GS

= ±30V, V

DS

= 0V

I

GSS

--

±100

nA

Zero Gate Voltage Drain Current

V

DS

= 500V, V

GS

= 0V

I

DSS

--

1

µA

Drain-Source On-State Resistance

(Note 4)

V

GS

= 10V, I

D

= 2.5A

R

DS(on)

--

1.2

1.38

Ω

Dynamic

(Note 5)

Total Gate Charge

V

DS

= 400V, I

D

= 5A,

V

GS

= 10V

Q

g

--

15

--

nC

Gate-Source Charge

Q

gs

--

4

--

Gate-Drain Charge

Q

gd

--

7

--

Input Capacitance

V

DS

= 50V, V

GS

= 0V,

f = 1.0MHz

C

iss

--

586

--

pF

Output Capacitance

C

oss

--

45

--

Reverse Transfer Capacitance

C

rss

--

1

--

Gate Resistance

f = 1.0MHz

R

g

--

2.9

5.8

Ω

Switching

(Note 6)

Turn-On Delay Time

V

DD

= 250V, R

G

= 5Ω,

I

D

= 5A, V

GS

= 10V

t

d(on)

--

9

--

ns

Turn-On Rise Time

t

r

--

22

--

Turn-Off Delay Time

t

d(off)

--

14

--

Turn-Off Fall Time

t

f

--

20

--

Source-Drain Diode

Forward Voltage

(Note 4)

I

S

= 5A, V

GS

= 0V

V

SD

--

1.3

V

Reverse Recovery Time

I

S

= 5A

dI

F

/dt = 100A/μs

t

rr

--

213

--

ns

Reverse Recovery Charge

Q

rr

--

1.6

--

μC

Notes:

1. Current limited by package

2. Pulse width limited by the maximum junction temperature

3. L = 20mH, I

AS

= 3.5A, V

DD

= 50V, R

G

= 25Ω, Starting T

J

= 25

o

C

4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%

5. For DESIGN AID ONLY, not subject to production testing.

6. Switching time is essentially independent of operating temperature.

ORDERING INFORMATION

PART NO.

PACKAGE

PACKING

TSM5NC50CZ C0G

TO-220

50pcs / Tube

TSM5NC50CZ

Taiwan Semiconductor

3 Version: A1705

CHARACTERISTICS CURVES

(T

A

= 25°C unless otherwise noted)

Output Characteristics

Transfer Characteristics

On-Resistance vs. Drain Current

Gate-Source Voltage vs. Gate Charge

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-Source Voltage

I

D

, Drain Current (A)

V

GS

, Gate to Source Voltage (V)

I

D

, Drain Current (A)

V

DS

, Drain to Source Voltage (V)

R

DS(ON)

, Drain-Source On-Resistance (Ω)

I

D

, Drain Current (A)

V

GS

, Gate to Source Voltage (V)

Q

g

, Gate Charge (nC)

R

DS(on)

, Drain-Source On-Resistance

(Normalized)

T

J

, Junction Temperature (°C)

R

DS(on)

, Drain-Source On-Resistance (Ω)

V

GS

, Gate to Source Voltage (V)

0

2

4

6

8

10

0 4 8 12 16

V

DS

=400V

I

D

=5A

0

0.5

1

1.5

2

2.5

3

-75 -50 -25 0 25 50 75 100 125 150

V

GS

=10V

I

D

=2.5A

0

1

2

3

4

5

0 2 4 6 8 10

V

GS

=10V

V

GS

=9V

V

GS

=8V

V

GS

=7V

V

GS

=6V

V

GS

=5V

0

1

2

3

4

5

0 2 4 6 8 10

25℃

-55℃

150℃

0.5

0.8

1.1

1.4

1.7

2

0 1 2 3 4 5

V

GS

=10V

1

1.1

1.2

1.3

1.4

1.5

6 7 8 9 10

I

D

=2.5A

TSM5NC50CZ C0G

TSM5NC50CZ C0G

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