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VS-30CPQ090-N3

P1-P3P4-P6P7-P7
VS-30CPQ1...PbF Series, VS-30CPQ1...-N3 Series
www.vishay.com
Vishay Semiconductors
Revision: 02-Dec-11
1
Document Number: 94184
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Schottky Rectifier, 2 x 15 A
FEATURES
• 175 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-30CPQ... center tap Schottky rectifier has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation
up to 175 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
PRODUCT SUMMARY
Package TO-247AC
I
F(AV)
2 x 15 A
V
R
80 V, 90 V, 100 V
V
F
at I
F
0.67 V
I
RM
max. 7 mA at 125 °C
T
J
max. 175 °C
Diode variation Common cathode
E
AS
7.5 mJ
Base
common
cathode
Common
cathode
2
2
13
Anode
1
Anode
2
TO-247AC
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 30 A
V
RRM
80/100 V
I
FSM
t
p
= 5 μs sine 920 A
V
F
15 Apk, T
J
= 125 °C (per leg) 0.67 V
T
J
- 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL
VS-
30CPQ080PbF
VS-
30CPQ080-N3
VS-
30CPQ090PbF
VS-
30CPQ090-N3
VS-
30CPQ100PbF
VS-
30CPQ100-N3
UNITS
Maximum DC
reverse voltage
V
R
80 80 90 90 100 100 V
Maximum working
peak reverse voltage
V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
C
= 140 °C, rectangular waveform 30
A
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
920
10 ms sine or 6 ms rect. pulse 240
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 0.50 A, L = 60 mH 7.50 mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
0.50 A
VS-30CPQ1...PbF Series, VS-30CPQ1...-N3 Series
www.vishay.com
Vishay Semiconductors
Revision: 02-Dec-11
2
Document Number: 94184
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1
V
FM
(1)
15 A
T
J
= 25 °C
0.86
V
30 A 1.05
15 A
T
J
= 125 °C
0.67
30 A 0.81
Maximum reverse leakage current per leg
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
0.55
mA
T
J
= 125 °C 7
Maximum junction capacitance per leg C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C 500 pF
Typical series inductance per leg L
S
Measured lead to lead 5 mm from package body 7.5 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 55 to 175 °C
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation
See fig. 4
2.20
°C/W
Maximum thermal resistance,
junction to case per package
DC operation 1.10
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.24
Approximate weight
6g
0.21 oz.
Mounting torque
minimum
Non-lubricated threads
6 (5)
kgf cm
(lbf in)
maximum 12 (10)
Marking device Case style TO-247AC (JEDEC)
30CPQ080
30CPQ090
30CPQ100
VS-30CPQ1...PbF Series, VS-30CPQ1...-N3 Series
www.vishay.com
Vishay Semiconductors
Revision: 02-Dec-11
3
Document Number: 94184
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
0.1
1
10
1000
100
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.5 1.5
2.5
2.01.0
0
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
0.0001
0.001
0.01
0.1
1
10
100
I
R
-Reverse Current (mA)
V
R
- Reverse Voltage (V)
20 60
100
8040
0
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
100
1000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
20 60
100
8040
0
T
J
= 25 °C
0.001
0.01
0.1
10
1
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
100 10
Single pulse
(thermal resistance)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
P1-P3P4-P6P7-P7

VS-30CPQ090-N3

Mfr. #:
Buy VS-30CPQ090-N3
Manufacturer:
Vishay Semiconductors
Description:
Diodes - General Purpose, Power, Switching Schottky - TO-247-e3
Lifecycle:
New from this manufacturer.
Delivery:
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