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VS-UFB120FA40P

P1-P3P4-P6P7-P8
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94086
4 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 21-Jul-10
UFB120FA40P
Vishay Semiconductors
Insulated Ultrafast
Rectifier Module, 120 A
Not Available for New Designs, Use VS-UFB130FA40
Fig. 5 - Maximum Allowable Case Temperature vs.
Avarage Forward Current (Per Diode)
Fig. 6 - Forward Power Loss (Per Diode)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
010
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
120
140
160
See note (1)
100
DC
80
60
20 30
Square wave (D = 0.50)
80 % rated V
R
applied
50
70
20
40
40 60
020
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
10 40
20
40
70
60
RMS limit
60
70
50
30
10
30
50
Document Number: 94086 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 21-Jul-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5
UFB120FA40P
Insulated Ultrafast
Rectifier Module, 120 A
Vishay Semiconductors
Not Available for New Designs, Use VS-UFB130FA40
Fig. 9 - Reverse Recovery Parameter Test Circuit
Fig. 10 - Reverse Recovery Waveform and Definitions
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dI
F
/dt
adjust
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dI
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve dened by t
rr
and I
RRM
t
rr
x I
RRM
2
Q
rr
=
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94086
6 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 21-Jul-10
UFB120FA40P
Vishay Semiconductors
Insulated Ultrafast
Rectifier Module, 120 A
Not Available for New Designs, Use VS-UFB130FA40
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95036
Packaging information www.vishay.com/doc?95037
1 - Ultrafast rectifier
2 - Ultrafast Pt diffused
3 - Current rating (120 = 120 A)
4 - Circuit configuration (2 separate diodes, parallel pin-out)
5 - Package indicator (SOT-227 standard isolated base)
6 - Voltage rating (40 = 400 V)
7 - None = Standard production
P = Lead (Pb)-free
Quantity per tube is 10, M4 screw and washer included
Device code
51 32 4 6 7
UF B 120 F A 40 P
1
4
2
3
P1-P3P4-P6P7-P8

VS-UFB120FA40P

Mfr. #:
Buy VS-UFB120FA40P
Manufacturer:
Vishay
Description:
DIODE GEN PURP 400V 60A SOT227
Lifecycle:
New from this manufacturer.
Delivery:
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