OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IRFH5250TRPBF

P1-P3P4-P6P7-P9
HEXFET
®
Power MOSFET
Notes through are on page 9
Features and Benefits
Applications
• OR-ing MOSFET for 12V (typical) Bus in-Rush Current
• Battery Operated DC Motor Inverter MOSFET
Features
Benefits
PQFN 5X6 mm
Low RDSon (<1.15 m
Ω
) Lower Conduction Losses
Low Thermal Resistance to PCB (<0.8°C/W) Enable better thermal dissipation
100% Rg tested Increased Reliability
Low Profile (<0.9 mm) results in Increased Power Density
Industry-Standard Pinout
⇒
Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Environmentally Friendlier
MSL1, Industrial Qualification Increased Reliability
V
DS
25 V
R
DS(on) max
(@V
GS
= 10V)
1.15 m
Ω
Q
g (typical)
52 nC
R
G (typical)
1.3
Ω
I
D
(@T
mb
= 25°C)
100
A
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
@ T
= 25°C Continuous Drain Current, V
GS
@ 10V
I
@ T
= 70°C Continuous Drain Current, V
GS
@ 10V
I
@ T
mb
= 25°C Continuous Drain Current, V
GS
@ 10V
I
@ T
mb
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
@T
= 25°C
Power Dissipation
P
@T
mb
= 25°C
Power Dissipation
Linear Derating Factor
W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
100
V
W
A
°C
-55 to + 150
3.6
0.029
160
Max.
45
100
400
± 20
25
31
IRFH5250PbF
1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015
Form Quantity
IRFH5250TRPbF PQFN 5mm x 6mm Tape and Reel 4000
IRFH5250TR2PBF
PQFN 5mm x 6mm
Tape and Reel
400
EOL notice # 259
Orderable part number Package Type
Standard Pack
Note
2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015
IRFH5250PbF
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 25 ––– ––– V
ΔΒ
V
DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 0.9 1.15
––– 1.4 1.75
V
GS(th)
Gate Threshold Voltage 1.35 1.80 2.35 V
V
DS
= V
GS
, I
D
= 150μA
Δ
V
GS(th)
Gate Threshold Voltage Coefficient ––– -6.3 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 5.0
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 181 ––– ––– S
Q
g
Total Gate Charge ––– 110 ––– nC
Q
g
Total Gate Charge ––– 52 78
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 13 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 7.8 –––
Q
gd
Gate-to-Drain Charge ––– 17 –––
Q
godr
Gate Charge Overdrive ––– 15 –––
Q
sw
Switch Charge (Q
gs2
+ Q
gd
) ––– 25 –––
Q
oss
Output Charge ––– 36 ––– nC
R
G
Gate Resistance ––– 1.3
–––
Ω
t
d(on)
Turn-On Delay Time ––– 28 –––
t
r
Rise Time ––– 46 –––
t
d(off)
Turn-Off Delay Time ––– 30 –––
t
f
Fall Time ––– 19 –––
C
is s
Input Capacitance ––– 7174 –––
C
oss
Output Capacitance ––– 1758 –––
C
rss
Reverse Transfer Capacitance ––– 828 –––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 37 56 ns
Q
rr
Reverse Recovery Charge ––– 68 102 nC
t
on
Forward Turn-On Time
V
GS
= 20V
V
GS
= -20V
Time is dominated by parasitic Inductance
ns
A
pF
nC
V
DS
= 13V
–––
V
DS
= 16V, V
GS
= 0V
V
GS
= 4.5V, I
D
= 50A
––– ––– 400
––– ––– 100
MOSFET symbol
nA
V
GS
= 10V, V
DS
= 13V, I
D
= 50A
I
D
= 50A
V
GS
= 0V
V
DS
= 13V
V
GS
= 4.5V
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 50A
V
DS
= 20V, V
GS
= 0V
Conditions
Max.
468
50
ƒ = 1.0MHz
T
J
= 25°C, I
F
= 50A, V
DD
= 13V
di/dt = 200A/μs
T
J
= 25°C, I
= 50A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
Typ.
–––
R
G
=1.8
Ω
V
DS
= 13V, I
D
= 50A
V
DS
= 20V, V
GS
= 0V, T
J
= 125°C
mΩ
μA
I
D
= 50A
V
DD
= 13V, V
GS
= 4.5V
Thermal Resistance
Parameter Typ. Max. Units
R
θ
J-mb
Junction-to-Mounting Base 0.5 0.8
R
θ
JC
(Top)
Junction-to-Case
––– 15
°C/W
R
θ
JA
Junction-to-Ambient
––– 35
R
θ
JA
(<10s)
Junction-to-Ambient
––– 21
3 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015
IRFH5250PbF
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
2.7V
≤
60μs
PULSE WIDTH
Tj = 150°C
VGS
TOP 10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
BOTTOM 2.7V
1 1.5 2 2.5 3 3.5 4 4.5 5
V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
DS
= 15V
≤
60μs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 50A
V
GS
= 10V
1 10 100
V
DS
, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0 20 40 60 80 100 120 140
Q
G
,
Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 20V
V
DS
= 13V
I
D
= 50A
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
BOTTOM 2.7V
≤
60μs
PULSE WIDTH
Tj = 25°C
2.7V
P1-P3P4-P6P7-P9

IRFH5250TRPBF

Mfr. #:
Buy IRFH5250TRPBF
Manufacturer:
Infineon / IR
Description:
MOSFET 25V 1 N-CH HEXFET 1.15mOhms 52nC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet