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VS-209CNQ135PBF

P1-P3P4-P6
VS-209CNQ...PbF Series
www.vishay.com
Vishay Semiconductors
Revision: 23-Sep-15
1
Document Number: 94156
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 200 A
FEATURES
• 175 °C T
J
operation
• Center tap module
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• UL approved file E222165
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
The VS-209CNQ center tap Schottky rectifier module series
has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows for
reliable operation up to 175 °C junction temperature. Typical
applications are in high current switching power supplies,
plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
PRODUCT SUMMARY
I
F(AV)
200 A
V
R
135 V, 150 V
Package TO-244
Circuit Two diodes common cathode
Base common
cathode
Lug
terminal
anode 1
Lug
terminal
anode 2
TO-244
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 200 A
V
RRM
Range 135/150 V
I
FSM
t
p
= 5 μs sine 10 000 A
V
F
100 A
pk
, T
J
= 125 °C (per leg) 0.71 V
T
J
Range -55 to +175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-209CNQ135PbF VS-209CNQ150PbF UNITS
Maximum DC reverse voltage V
R
135 150 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
per leg
I
F(AV)
50 % duty cycle at T
C
= 131 °C, rectangular
waveform
100
A
per device 200
Maximum peak one cycle non-repetitive surge
current per leg
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and
with rated V
RRM
applied
10 000
10 ms sine or 6 ms rect. pulse 1200
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 5.5 A, L = 1 mH 15 mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
1A
VS-209CNQ...PbF Series
www.vishay.com
Vishay Semiconductors
Revision: 23-Sep-15
2
Document Number: 94156
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1
V
FM
(1)
100 A
T
J
= 25 °C
1.06
V
200 A 1.33
100 A
T
J
= 125 °C
0.74
200 A 0.88
Maximum reverse leakage current per leg
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
3
mA
T
J
= 125 °C 45
Maximum junction capacitance per leg C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C 3000 pF
Typical series inductance per leg L
S
From top of terminal hole to mounting plane 7.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Maximum junction and storage temperature range T
J
, T
Stg
-55 - 175 °C
Thermal resistance, junction to case
per leg
R
thJC
- - 0.38
°C/Wper module - - 0.19
Thermal resistance, case to heatsink R
thCS
-0.10-
Weight -
68
-
g
2.4 oz.
Mounting torque 35.4 (4) - 53.1 (6)
lbf in
(N m)
Mounting torque center hole 30 (3.4) - 40 (4.6)
Terminal torque 30 (3.4) - 44.2 (5)
Vertical pull - - 80
lbf in
2" lever pull - - 35
1
10
100
I
F
- Instantaneous Forward
Current (A)
V
FM
- Forward Voltage Drop (V)
0 1.0 2.0
1000
0.5 1.5
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
0 30 150
0.01
0.1
1
10
100
120
1000
60 90
0.001
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
VS-209CNQ...PbF Series
www.vishay.com
Vishay Semiconductors
Revision: 23-Sep-15
3
Document Number: 94156
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
0 60 90 120
1000
30
10 000
T
J
= 25 °C
100
Z
thJC
- Thermal Impedance (°C/W)
0.001
0.01
0.1
1
t
1
- Rectangular Pulse Duration (s)
0.00001 0.0001 0.001 0.01 0.1 1 10
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
0 16060
60
80
120
200
20 100 120
160
40 14080
180
140
100
DC
See note (1)
Square wave (D = 0.50)
80 % rated V
R
applied
0
120
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0
60 150
30
90
60
120
100
80
40
20
DC
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
P1-P3P4-P6

VS-209CNQ135PBF

Mfr. #:
Buy VS-209CNQ135PBF
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 200 Amp 135 Volt Common Cathode
Lifecycle:
New from this manufacturer.
Delivery:
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