VBO30-12NO7
011
200
400
600
800
0.4 0.6 0.8 1.0 1.2 1.4 1.6
0
10
20
30
40
50
60
10
-3
10
-2
10
-1
10
0
150
200
250
300
3
0
1 10 100 1000 10000 100000
0
1
2
3
4
5
0 25 50 75 100 125 150 17504812
0
4
8
12
16
0 25 50 75 100 125 150
0
4
8
12
16
20
24
28
32
Constants for Z
thJC
calculation:
iR
th
(K/W) t
i
(s)
1 0.194 0.024
2 0.556 0.070
3 0.450 3.250
4 3.000 9.300
0.8 x V
RRM
50 Hz
T
VJ
= 45°C
V
R
=0V
R
thJA
:
0.6 KW
0.8 KW
1KW
2KW
4KW
8KW
DC =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
=
125°C
150°C
T
VJ
=25°C
T
VJ
=150°C
T
VJ
= 150°C
Fig. 1 Forward current vs.
voltage drop per diode
Fig. 2 Surge overload current
vs. time per diode
Fig. 3 I
2
tvs.timeperdiode
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
Fig. 5 Max. forward current vs.
case temperature per diode
Fig. 6 Transient thermal impedance junction to case vs. time per diode
DC =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
=45°C
Rectifier
IXYS reserves the right to change limits, conditions and dimensions.
20130606dData according to IEC 60747and per semiconductor unless otherwise specified
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