HMC326MS8GETR

For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
1
HMC326MS8G / 326MS8GE
v09.0511
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
General Description
Features
Functional Diagram
The HMC326MS8G & HMC326MS8GE are high
efficiency GaAs InGaP Heterojunction Bipolar
Transistor (HBT) MMIC driver ampliers which
operate between 3.0 and 4.5 GHz. The amplier
is packaged in a low cost, surface mount 8 leaded
package with an exposed base for improved RF and
thermal performance. The amplier provides 21 dB
of gain and +26 dBm of saturated power from a +5V
supply voltage. Power down capability is available to
conserve current consumption when the amplier is
not in use. Internal circuit matching was optimized to
provide greater than 40% PAE.
Psat Output Power: +26 dBm
> 40% PAE
Output IP3: +36 dBm
High Gain: 21 dB
Vs: +5V
Ultra Small Package: MSOP8G
Electrical Specications, T
A
= +25° C, Vs = 5V, Vpd = 5V
Typical Applications
The HMC326MS8G / HMC326MS8GE is ideal for:
• Microwave Radios
• Broadband Radio Systems
• Wireless Local Loop Driver Amplier
Parameter Min. Ty p. Max. Units
Frequency Range 3.0 - 4.5 GHz
Gain 18 21 dB
Gain Variation Over Temperature 0.025 0.035 dB / °C
Input Return Loss 12 dB
Output Return Loss 7 dB
Output Power for 1dB Compression (P1dB) 21 23.5 dBm
Saturated Output Power (Psat) 26 dBm
Output Third Order Intercept (IP3) 32 36 dBm
Noise Figure 5 dB
Supply Current (Icc) Vpd = 0V 1 uA
Supply Current (Icc) Vpd = 5V 110 130 160 mA
Control Current (Ipd) 7 mA
Switching Speed tOn/tOff 10 ns
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
HMC326* PRODUCT PAGE QUICK LINKS
Last Content Update: 02/23/2017
COMPARABLE PARTS
View a parametric search of comparable parts.
EVALUATION KITS
HMC326MS8G Evaluation Board
DOCUMENTATION
Application Notes
AN-1363: Meeting Biasing Requirements of Externally
Biased RF/Microwave Amplifiers with Active Bias
Controllers
Broadband Biasing of Amplifiers General Application Note
MMIC Amplifier Biasing Procedure Application Note
Thermal Management for Surface Mount Components
General Application Note
Data Sheet
HMC326 Data Sheet
TOOLS AND SIMULATIONS
HMC326 S-Parameter
REFERENCE MATERIALS
Quality Documentation
HMC Legacy PCN: MS##, MS##E and MS##G,MS##GE
packages - Relocation of pre-existing production
equipment to new building
Package/Assembly Qualification Test Report: MS8G (QTR:
2014-00393)
PCN: MS, QS, SOT, SOIC packages - Sn/Pb plating vendor
change
Semiconductor Qualification Test Report: GaAs HBT-B
(QTR: 2013-00229)
DESIGN RESOURCES
HMC326 Material Declaration
PCN-PDN Information
Quality And Reliability
Symbols and Footprints
DISCUSSIONS
View all HMC326 EngineerZone Discussions.
SAMPLE AND BUY
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TECHNICAL SUPPORT
Submit a technical question or find your regional support
number.
DOCUMENT FEEDBACK
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For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
2
HMC326MS8G / 326MS8GE
v09.0511
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
P1dB vs. Temperature Psat vs. Temperature
Broadband Gain & Return Loss Gain vs. Temperature
Output IP3 vs. Temperature
-20
-15
-10
-5
0
5
10
15
20
25
2 2.5 3 3.5 4 4.5 5 5.5 6
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
15
17
19
21
23
25
3 3.25 3.5 3.75 4 4.25 4.5
+25C
+85C
-40C
GAIN (dB)
FREQUENCY (GHz)
20
22
24
26
28
30
3 3.25 3.5 3.75 4 4.25 4.5
+25C
+85C
-40C
OUTPUT P1dB (dBm)
FREQUENCY (GHz)
20
22
24
26
28
30
3 3.25 3.5 3.75 4 4.25 4.5
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
30
32
34
36
38
40
3 3.25 3.5 3.75 4 4.25 4.5
+25C
+85C
-40C
OIP3 (dBm)
FREQUENCY (GHz)
0
5
10
15
20
25
30
35
40
45
-8 -6 -4 -2 0 2 4 6 8 10 12
Output Power (dBm)
Gain (dB)
PAE (%)
Pout (dBm), Gain (dB), PAE (%)
INPUT POWER (dBm)
Power Compression @ 3.5 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D

HMC326MS8GETR

Mfr. #:
Manufacturer:
Analog Devices / Hittite
Description:
RF Amplifier InGaP HBT Driver amp SMT, 3.0 - 4.5 GHz
Lifecycle:
New from this manufacturer.
Delivery:
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