ALD114835/ALD114935 Advanced Linear Devices 7 of 11
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
DRAIN - GATE DIODE CONNECTED VOLTAGE
TEMPCO vs. DRAIN SOURCE ON CURRENT
5
DRAIN- GATE DIODE CONNECTED
VOLTAGE TEMPCO (mV/ °C )
DRAIN SOURCE ON CURRENT (µA)
1 10 100 1000
-55°C ≤ T
A
≤ +125°C
0
-5
-2.5
2.5
NORMALIZED SUBTHRESHOLD
CHARACTERISTICS RELATIVE
GATE THRESHOLD VOLTAGE
DRAIN-SOURCE CURRENT (nA)
0.3
0.2
0.1
0
-0.1
-0.2
GATE-SOURCE VOLTAGE - THRESHOLD
VOLTAGE (V)
V
GS
- V
GS(th)
-0.3
-0.4
10000
1000 100
10 1 0.1
V
D
= 0.1V
55°C
25°C
TRANCONDUCTANCE vs. DRAIN-SOURCE
ON CURRENT
DRAIN -SOURCE ON CURRENT(mA)
TARNCONDUCTANCE
( mΩ
-1
)
2
4
6
8
10
0.0
1.2
0.9
0.6
0.3
0
T
A
= 25°C
V
DS
= +10V
0.5
1.0
2.0
5.0
0.2
0.1
DRAIN-SOURCE ON VOLTAGE (V)
ZERO TEMPERETURE COEFFICIENT CHARACTERISTIC
GATE-SOURCE VOLTAGE - THRESHOLD
VOLTAGE (V)
0.0
0.2
0.5
0.6
0.3
V
GS(TH)
=-3.5V
V
GS(TH)
=-1.3V, -0.4V, 0.0V, +0.2V, +0.8V, +1.4V
TRANSFER CHARACTERISTICS
GATE-SOURCE VOLTAGE (V)
-4 -2 0 2 4 8 106
1.6
1.2
0.8
0.4
TRANSCONDUCTANCE
( mΩ
-1
)
0.0
T
A
= 25°C
V
DS
= +10V
V
GS(TH)
= -3.5V
V
GS(TH)
= -0.4V
V
GS(TH)
= 0.0V
V
GS(TH)
= +0.2V
V
GS(TH)
= +0.8V
V
GS(TH)
= -1.3V
V
GS(TH)
= +1.4V
GATE-SOURCE VOLTAGE (V)
SUBTHRESHOLD CHARACTERISTICS
DRAIN -SOURCE CURRENT (nA)
2.5
2.0
1.0
0.5
0.0
1.5
-0.5
100000
10000
1000 100 10
1
0.1
55°C
V
GS(th)
= 0.2V
V
GS(th)
= 0.4V
25°C
THRESHOLD VOLTAGE
(V)
THRESHOLD VOLTAGES
vs. AMBIENT TEMPERATURES
AMBIENT TEMPERATURE (
O
C)
2.0
1.0
-1.0
-2.0
-3.0
0.0
-4.0
-25 25 75 125
I
DS
= +1µA
V
DS
= +0.1V
V
GS(th)
= -0.4V
V
GS(th)
= -1.3V
V
GS(th)
= -3.5V
V
GS(th)
= 0.0V
THRESHOLD VOLTAGE vs.
AMBIENT TEMPERATURE
4.0
3.0
2.0
0
THRESHOLD VOTAGE
(V)
AMBIENT TEMPERATURE (°C)
-50 -25 0 25 50
125
10075
1.0
V
DS
= +0.1V
I
D
= 1.0
µA
V
t
= 0.8V
V
t
= 1.4V
V
t
= 0.4V
V
t
= 0.2V
V
t
= 0.0V
